Biexciton gain and the mott transition in GaAs quantum wires

Yuhei Hayamizu, Masahiro Yoshita, Yasushi Takahashi, Hidefumi Akiyama, C. Z. Ning, Loren N. Pfeiffer, Ken W. West

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Optical gain and the Mott transition in GaAs quantum wires were studied via simultaneous measurements of absorption and photoluminescence (PL). We observed well-separated PL peaks assigned to excitons (X) and biexcitons (XX) even at densities where optical gain existed. A sharp optical gain first appeared when the XX peak overtook the X peak, indicating the gain origin of biexciton-exciton population inversion. The XX peak eventually changed to a broad peak of plasma, and a broad gain due to plasma was observed as the Mott transition was completed.

Original languageEnglish (US)
Article number167403
JournalPhysical review letters
Issue number16
StatePublished - Oct 19 2007
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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