Bidirectional semiconductor laser

Claire Gmachl, Alessandro Tredicucci, Deborah L. Sivco, Albert L. Hutchinson, Federico Capasso, Alfred Y. Cho

Research output: Contribution to journalArticle

57 Scopus citations

Abstract

A semiconductor laser capable of operating under both positive and negative bias voltage is reported. Its active region behaves functionally as two different laser materials, emitting different wavelengths, depending on the design, when biased with opposite polarities. This concept was used for the generation of two wavelengths (6.3 and 6.5 micrometers) in the midinfrared region of the spectrum from a single quantum cascade laser structure. The two wavelengths are excited independently of each other and separated in time. This may have considerable impact on various semiconductor laser applications including trace gas analysis in remote sensing applications with differential absorption spectroscopy.

Original languageEnglish (US)
Pages (from-to)749-752
Number of pages4
JournalScience
Volume286
Issue number5440
DOIs
StatePublished - Oct 22 1999
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General

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    Gmachl, C., Tredicucci, A., Sivco, D. L., Hutchinson, A. L., Capasso, F., & Cho, A. Y. (1999). Bidirectional semiconductor laser. Science, 286(5440), 749-752. https://doi.org/10.1126/science.286.5440.749