TY - JOUR
T1 - Bidirectional semiconductor laser
AU - Gmachl, Claire
AU - Tredicucci, Alessandro
AU - Sivco, Deborah L.
AU - Hutchinson, Albert L.
AU - Capasso, Federico
AU - Cho, Alfred Y.
PY - 1999/10/22
Y1 - 1999/10/22
N2 - A semiconductor laser capable of operating under both positive and negative bias voltage is reported. Its active region behaves functionally as two different laser materials, emitting different wavelengths, depending on the design, when biased with opposite polarities. This concept was used for the generation of two wavelengths (6.3 and 6.5 micrometers) in the midinfrared region of the spectrum from a single quantum cascade laser structure. The two wavelengths are excited independently of each other and separated in time. This may have considerable impact on various semiconductor laser applications including trace gas analysis in remote sensing applications with differential absorption spectroscopy.
AB - A semiconductor laser capable of operating under both positive and negative bias voltage is reported. Its active region behaves functionally as two different laser materials, emitting different wavelengths, depending on the design, when biased with opposite polarities. This concept was used for the generation of two wavelengths (6.3 and 6.5 micrometers) in the midinfrared region of the spectrum from a single quantum cascade laser structure. The two wavelengths are excited independently of each other and separated in time. This may have considerable impact on various semiconductor laser applications including trace gas analysis in remote sensing applications with differential absorption spectroscopy.
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U2 - 10.1126/science.286.5440.749
DO - 10.1126/science.286.5440.749
M3 - Article
C2 - 10531055
AN - SCOPUS:0033595805
SN - 0036-8075
VL - 286
SP - 749
EP - 752
JO - Science
JF - Science
IS - 5440
ER -