Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors

Anoop S. Dhoot; Jonathan D. Yuen; Martin Heeney; Iain McCulloch; Daniel Moses; Alan J. Heeger

doi:10.1073/pnas.0605033103

Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors

Anoop S. Dhoot, Jonathan D. Yuen, Martin Heeney, Iain McCulloch, Daniel Moses, Alan J. Heeger

Research output: Contribution to journal › Article › peer-review

166 Scopus citations

Abstract

We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen- 2-yl)thieno[3,2-b]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (10¹⁵ cm^-2) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 × 10⁶ A/cm², and high metallic conductivities, 10⁴ S/cm, in the FET channel; at 4.2 K, the current density is sustained at 10⁷ A/cm². Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is ≈3.5 cm^2.V^-1·^s-1 at 297 K, comparable with that found in fully crystalline organic devices.

Original language	English (US)
Pages (from-to)	11834-11837
Number of pages	4
Journal	Proceedings of the National Academy of Sciences of the United States of America
Volume	103
Issue number	32
DOIs	https://doi.org/10.1073/pnas.0605033103
State	Published - Aug 8 2006
Externally published	Yes

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Keywords

Conjugated polymer
Electronic transport

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10.1073/pnas.0605033103

Cite this

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abstract = "We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen- 2-yl)thieno[3,2-b]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (1015 cm-2) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 × 106 A/cm2, and high metallic conductivities, 104 S/cm, in the FET channel; at 4.2 K, the current density is sustained at 107 A/cm2. Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is ≈3.5 cm2.V-1·s-1 at 297 K, comparable with that found in fully crystalline organic devices.",

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AU - Dhoot, Anoop S.

AU - Yuen, Jonathan D.

AU - Heeney, Martin

AU - McCulloch, Iain

AU - Moses, Daniel

AU - Heeger, Alan J.

PY - 2006/8/8

Y1 - 2006/8/8

N2 - We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen- 2-yl)thieno[3,2-b]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (1015 cm-2) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 × 106 A/cm2, and high metallic conductivities, 104 S/cm, in the FET channel; at 4.2 K, the current density is sustained at 107 A/cm2. Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is ≈3.5 cm2.V-1·s-1 at 297 K, comparable with that found in fully crystalline organic devices.

AB - We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen- 2-yl)thieno[3,2-b]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (1015 cm-2) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 × 106 A/cm2, and high metallic conductivities, 104 S/cm, in the FET channel; at 4.2 K, the current density is sustained at 107 A/cm2. Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is ≈3.5 cm2.V-1·s-1 at 297 K, comparable with that found in fully crystalline organic devices.

KW - Conjugated polymer

KW - Electronic transport

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Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors

Abstract

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