Base transport in near-ideal graded-base Si/Si1-xGex/Si heterojunction bipolar transistors from 150 K to 370 K

Research output: Contribution to journalConference article

4 Scopus citations

Fingerprint Dive into the research topics of 'Base transport in near-ideal graded-base Si/Si<sub>1-x</sub>Ge<sub>x</sub>/Si heterojunction bipolar transistors from 150 K to 370 K'. Together they form a unique fingerprint.

Physics & Astronomy

Engineering & Materials Science

Chemical Compounds