Base transport in near-ideal graded-base Si/Si1-xGex/Si heterojunction bipolar transistors from 150 K to 370 K

E. J. Prinz; J. C. Sturm

Base transport in near-ideal graded-base Si/Si_1-xGe_x/Si heterojunction bipolar transistors from 150 K to 370 K

E. J. Prinz
, J. C. Sturm

Research output: Contribution to journal › Conference article › peer-review

Abstract

A detailed study of electron base transport in Si/Si_1-xGe_x/Si graded-base npn heterojunction bipolar transistors is presented. The temperature dependence from 150 to 370 K of the collector current in near-ideal devices with various base gradings is examined, and it is shown that this collector current can be modeled over the entire temperature range by a simple analytical formula. It is also shown that graded base devices with an estimated room-temperature base spreading resistance of 7 kΩ/□ have a gain of about 4000 at 89 K.

Original language	English (US)
Pages (from-to)	975-978
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - Dec 1990
Event	1990 International Electron Devices Meeting - San Francisco, CA, USA Duration: Dec 9 1990 → Dec 12 1990

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{e0dbeb794b5440bf856d522ec137cabe,

title = "Base transport in near-ideal graded-base Si/Si1-xGex/Si heterojunction bipolar transistors from 150 K to 370 K",

abstract = "A detailed study of electron base transport in Si/Si1-xGex/Si graded-base npn heterojunction bipolar transistors is presented. The temperature dependence from 150 to 370 K of the collector current in near-ideal devices with various base gradings is examined, and it is shown that this collector current can be modeled over the entire temperature range by a simple analytical formula. It is also shown that graded base devices with an estimated room-temperature base spreading resistance of 7 kΩ/□ have a gain of about 4000 at 89 K.",

author = "Prinz, \{E. J.\} and Sturm, \{J. C.\}",

year = "1990",

month = dec,

language = "English (US)",

pages = "975--978",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1990 International Electron Devices Meeting ; Conference date: 09-12-1990 Through 12-12-1990",

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TY - JOUR

T1 - Base transport in near-ideal graded-base Si/Si1-xGex/Si heterojunction bipolar transistors from 150 K to 370 K

AU - Prinz, E. J.

AU - Sturm, J. C.

PY - 1990/12

Y1 - 1990/12

N2 - A detailed study of electron base transport in Si/Si1-xGex/Si graded-base npn heterojunction bipolar transistors is presented. The temperature dependence from 150 to 370 K of the collector current in near-ideal devices with various base gradings is examined, and it is shown that this collector current can be modeled over the entire temperature range by a simple analytical formula. It is also shown that graded base devices with an estimated room-temperature base spreading resistance of 7 kΩ/□ have a gain of about 4000 at 89 K.

AB - A detailed study of electron base transport in Si/Si1-xGex/Si graded-base npn heterojunction bipolar transistors is presented. The temperature dependence from 150 to 370 K of the collector current in near-ideal devices with various base gradings is examined, and it is shown that this collector current can be modeled over the entire temperature range by a simple analytical formula. It is also shown that graded base devices with an estimated room-temperature base spreading resistance of 7 kΩ/□ have a gain of about 4000 at 89 K.

UR - https://www.scopus.com/pages/publications/0025578731

UR - https://www.scopus.com/pages/publications/0025578731#tab=citedBy

M3 - Conference article

AN - SCOPUS:0025578731

SN - 0163-1918

SP - 975

EP - 978

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1990 International Electron Devices Meeting

Y2 - 9 December 1990 through 12 December 1990

ER -

Base transport in near-ideal graded-base Si/Si_1-xGe_x/Si heterojunction bipolar transistors from 150 K to 370 K

Abstract

All Science Journal Classification (ASJC) codes

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