Base transport in near-ideal graded-base Si/Si1-xGex/Si heterojunction bipolar transistors from 150 K to 370 K

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Abstract

A detailed study of electron base transport in Si/Si1-xGex/Si graded-base npn heterojunction bipolar transistors is presented. The temperature dependence from 150 to 370 K of the collector current in near-ideal devices with various base gradings is examined, and it is shown that this collector current can be modeled over the entire temperature range by a simple analytical formula. It is also shown that graded base devices with an estimated room-temperature base spreading resistance of 7 kΩ/□ have a gain of about 4000 at 89 K.

Original languageEnglish (US)
Pages (from-to)975-978
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 1990
Event1990 International Electron Devices Meeting - San Francisco, CA, USA
Duration: Dec 9 1990Dec 12 1990

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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