Barrier formation at metal-organic interfaces: Dipole formation and the charge neutrality level

H. Vázquez, F. Flores, R. Oszwaldowski, J. Ortega, R. Pérez, A. Kahn

Research output: Contribution to journalConference articlepeer-review

157 Scopus citations

Abstract

The barrier formation for metal-organic semiconductor interfaces is analyzed within the induced density of interface states (IDIS) model. Using weak chemisorption theory, we calculate the induced density of states in the organic energy gap and show that it is high enough to control the barrier formation. We calculate the charge neutrality levels of several organic molecules: 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA), 3,4,9,10- perylenetetracarboxylic bisbenzimidazole (PTCBI) and 4,4′,N,N′- dicarbazolyl biphenyl (CBP) and the interface Fermi level for their contact with a Au (111) surface. We find an excellent agreement with the experimental evidence and conclude that the barrier formation is due to the charge transfer between the metal and the states induced in the organic energy gap.

Original languageEnglish (US)
Pages (from-to)107-112
Number of pages6
JournalApplied Surface Science
Volume234
Issue number1-4
DOIs
StatePublished - Jul 15 2004
EventThe Ninth International Conference on the Formation of Semicon - Madrid, Spain
Duration: Sep 15 2003Sep 19 2003

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Keywords

  • Barrier formation
  • Charge neutrality level
  • Energy level alignment
  • Fermi level pining
  • Induced density of interface states
  • Metal-organic interface

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