Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD

Jiun Yun Li; James Christopher Sturm

doi:10.1109/DRC.2009.5354859

Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD

Jiun Yun Li, James Christopher Sturm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

There is great interest in SiGe/Si heterojunction tunnel diodes for novel devices such as sharp subthreshold slope MOSFET's. High tunneling current densities are a clear goal (for MOSFET drive current, e.g.). This work presents two clear results: (i) a direct measurement of the dependences on bandgap (Ge fraction) of the direct tunneling current vs. the "excess" defect-assisted tunneling current, and (ii) the highest direct tunneling currents (NDR current peaks) observed in Si-based heterojunction diodes grown by chemical vapor deposition.

Original language	English (US)
Title of host publication	67th Device Research Conference, DRC 2009
Pages	99-100
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2009.5354859
State	Published - Dec 11 2009
Event	67th Device Research Conference, DRC 2009 - University Park, PA, United States Duration: Jun 22 2009 → Jun 24 2009

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	67th Device Research Conference, DRC 2009
Country/Territory	United States
City	University Park, PA
Period	6/22/09 → 6/24/09

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2009.5354859

Cite this

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title = "Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD",

abstract = "There is great interest in SiGe/Si heterojunction tunnel diodes for novel devices such as sharp subthreshold slope MOSFET's. High tunneling current densities are a clear goal (for MOSFET drive current, e.g.). This work presents two clear results: (i) a direct measurement of the dependences on bandgap (Ge fraction) of the direct tunneling current vs. the {"}excess{"} defect-assisted tunneling current, and (ii) the highest direct tunneling currents (NDR current peaks) observed in Si-based heterojunction diodes grown by chemical vapor deposition.",

author = "Li, {Jiun Yun} and Sturm, {James Christopher}",

year = "2009",

month = dec,

day = "11",

doi = "10.1109/DRC.2009.5354859",

language = "English (US)",

isbn = "9781424435289",

series = "Device Research Conference - Conference Digest, DRC",

pages = "99--100",

booktitle = "67th Device Research Conference, DRC 2009",

note = "67th Device Research Conference, DRC 2009 ; Conference date: 22-06-2009 Through 24-06-2009",

}

Li, JY & Sturm, JC 2009, Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD. in 67th Device Research Conference, DRC 2009., 5354859, Device Research Conference - Conference Digest, DRC, pp. 99-100, 67th Device Research Conference, DRC 2009, University Park, PA, United States, 6/22/09. https://doi.org/10.1109/DRC.2009.5354859

Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD. / Li, Jiun Yun; Sturm, James Christopher.
67th Device Research Conference, DRC 2009. 2009. p. 99-100 5354859 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Li, Jiun Yun

AU - Sturm, James Christopher

PY - 2009/12/11

Y1 - 2009/12/11

N2 - There is great interest in SiGe/Si heterojunction tunnel diodes for novel devices such as sharp subthreshold slope MOSFET's. High tunneling current densities are a clear goal (for MOSFET drive current, e.g.). This work presents two clear results: (i) a direct measurement of the dependences on bandgap (Ge fraction) of the direct tunneling current vs. the "excess" defect-assisted tunneling current, and (ii) the highest direct tunneling currents (NDR current peaks) observed in Si-based heterojunction diodes grown by chemical vapor deposition.

AB - There is great interest in SiGe/Si heterojunction tunnel diodes for novel devices such as sharp subthreshold slope MOSFET's. High tunneling current densities are a clear goal (for MOSFET drive current, e.g.). This work presents two clear results: (i) a direct measurement of the dependences on bandgap (Ge fraction) of the direct tunneling current vs. the "excess" defect-assisted tunneling current, and (ii) the highest direct tunneling currents (NDR current peaks) observed in Si-based heterojunction diodes grown by chemical vapor deposition.

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BT - 67th Device Research Conference, DRC 2009

T2 - 67th Device Research Conference, DRC 2009

Y2 - 22 June 2009 through 24 June 2009

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Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD

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