TY - GEN
T1 - Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD
AU - Li, Jiun Yun
AU - Sturm, James Christopher
PY - 2009/12/11
Y1 - 2009/12/11
N2 - There is great interest in SiGe/Si heterojunction tunnel diodes for novel devices such as sharp subthreshold slope MOSFET's. High tunneling current densities are a clear goal (for MOSFET drive current, e.g.). This work presents two clear results: (i) a direct measurement of the dependences on bandgap (Ge fraction) of the direct tunneling current vs. the "excess" defect-assisted tunneling current, and (ii) the highest direct tunneling currents (NDR current peaks) observed in Si-based heterojunction diodes grown by chemical vapor deposition.
AB - There is great interest in SiGe/Si heterojunction tunnel diodes for novel devices such as sharp subthreshold slope MOSFET's. High tunneling current densities are a clear goal (for MOSFET drive current, e.g.). This work presents two clear results: (i) a direct measurement of the dependences on bandgap (Ge fraction) of the direct tunneling current vs. the "excess" defect-assisted tunneling current, and (ii) the highest direct tunneling currents (NDR current peaks) observed in Si-based heterojunction diodes grown by chemical vapor deposition.
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U2 - 10.1109/DRC.2009.5354859
DO - 10.1109/DRC.2009.5354859
M3 - Conference contribution
AN - SCOPUS:76549130404
SN - 9781424435289
T3 - Device Research Conference - Conference Digest, DRC
SP - 99
EP - 100
BT - 67th Device Research Conference, DRC 2009
T2 - 67th Device Research Conference, DRC 2009
Y2 - 22 June 2009 through 24 June 2009
ER -