Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

There is great interest in SiGe/Si heterojunction tunnel diodes for novel devices such as sharp subthreshold slope MOSFET's. High tunneling current densities are a clear goal (for MOSFET drive current, e.g.). This work presents two clear results: (i) a direct measurement of the dependences on bandgap (Ge fraction) of the direct tunneling current vs. the "excess" defect-assisted tunneling current, and (ii) the highest direct tunneling currents (NDR current peaks) observed in Si-based heterojunction diodes grown by chemical vapor deposition.

Original languageEnglish (US)
Title of host publication67th Device Research Conference, DRC 2009
Pages99-100
Number of pages2
DOIs
StatePublished - Dec 11 2009
Event67th Device Research Conference, DRC 2009 - University Park, PA, United States
Duration: Jun 22 2009Jun 24 2009

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other67th Device Research Conference, DRC 2009
CountryUnited States
CityUniversity Park, PA
Period6/22/096/24/09

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Li, J. Y., & Sturm, J. C. (2009). Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD. In 67th Device Research Conference, DRC 2009 (pp. 99-100). [5354859] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2009.5354859