Band Structure of the IV-VI Black Phosphorus Analog and Thermoelectric SnSe

I. Pletikosić, F. Von Rohr, P. Pervan, P. K. Das, I. Vobornik, R. J. Cava, T. Valla

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

The success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in the presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust and isoelectronic and share the same structure with black phosphorus. We measure the band structure of SnSe and find highly anisotropic valence bands that form several valleys having fast dispersion within the layers and negligible dispersion across. This is exactly the band structure desired for efficient thermoelectric generation where SnSe has shown great promise.

Original languageEnglish (US)
Article number156403
JournalPhysical review letters
Volume120
Issue number15
DOIs
StatePublished - Apr 10 2018

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Band Structure of the IV-VI Black Phosphorus Analog and Thermoelectric SnSe'. Together they form a unique fingerprint.

  • Cite this

    Pletikosić, I., Von Rohr, F., Pervan, P., Das, P. K., Vobornik, I., Cava, R. J., & Valla, T. (2018). Band Structure of the IV-VI Black Phosphorus Analog and Thermoelectric SnSe. Physical review letters, 120(15), [156403]. https://doi.org/10.1103/PhysRevLett.120.156403