Band offsets at heterojunctions between SrTiO 3 and BaTiO 3 and Si(100)

F. Amy, A. S. Wan, A. Kahn, F. J. Walker, R. A. McKee

Research output: Contribution to journalArticle

54 Scopus citations

Abstract

The use of thin films epitaxially grown on Si(100) substrates, to investigate band discontinuities at the SrTiO 3/Si and BaTiO 3/Si heterojunctions, was discussed. It was observed that x-ray photoemission spectroscopy (XPS) reported a maximum of 0.1 eV conduction band offset for the STO/Si interface. It was shown that depending on surface treatment, the valence band offset varies from 2.35 to 2.66 eV for BaTiO 3/Si and 2.38 to 2.64 eV for SRTiO 3/Si heterostructrure. It was suggested that the BaTiO 3/Si and SrTiO 3/Si interfaces underwent significant chemical changes during surface cleaning of the oxide film.

Original languageEnglish (US)
Pages (from-to)1635-1639
Number of pages5
JournalJournal of Applied Physics
Volume96
Issue number3
DOIs
StatePublished - Aug 1 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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