The use of thin films epitaxially grown on Si(100) substrates, to investigate band discontinuities at the SrTiO 3/Si and BaTiO 3/Si heterojunctions, was discussed. It was observed that x-ray photoemission spectroscopy (XPS) reported a maximum of 0.1 eV conduction band offset for the STO/Si interface. It was shown that depending on surface treatment, the valence band offset varies from 2.35 to 2.66 eV for BaTiO 3/Si and 2.38 to 2.64 eV for SRTiO 3/Si heterostructrure. It was suggested that the BaTiO 3/Si and SrTiO 3/Si interfaces underwent significant chemical changes during surface cleaning of the oxide film.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Applied Physics|
|State||Published - Aug 1 2004|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)