Band offsets at heterojunctions between SrTiO 3 and BaTiO 3 and Si(100)

F. Amy; A. S. Wan; A. Kahn; F. J. Walker; R. A. McKee

doi:10.1063/1.1766417

Band offsets at heterojunctions between SrTiO ₃ and BaTiO ₃ and Si(100)

F. Amy, A. S. Wan, A. Kahn, F. J. Walker, R. A. McKee

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62 Scopus citations

Abstract

The use of thin films epitaxially grown on Si(100) substrates, to investigate band discontinuities at the SrTiO ₃/Si and BaTiO ₃/Si heterojunctions, was discussed. It was observed that x-ray photoemission spectroscopy (XPS) reported a maximum of 0.1 eV conduction band offset for the STO/Si interface. It was shown that depending on surface treatment, the valence band offset varies from 2.35 to 2.66 eV for BaTiO ₃/Si and 2.38 to 2.64 eV for SRTiO ₃/Si heterostructrure. It was suggested that the BaTiO ₃/Si and SrTiO ₃/Si interfaces underwent significant chemical changes during surface cleaning of the oxide film.

Original language	English (US)
Pages (from-to)	1635-1639
Number of pages	5
Journal	Journal of Applied Physics
Volume	96
Issue number	3
DOIs	https://doi.org/10.1063/1.1766417
State	Published - Aug 1 2004

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.1766417

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title = "Band offsets at heterojunctions between SrTiO 3 and BaTiO 3 and Si(100)",

abstract = "The use of thin films epitaxially grown on Si(100) substrates, to investigate band discontinuities at the SrTiO 3/Si and BaTiO 3/Si heterojunctions, was discussed. It was observed that x-ray photoemission spectroscopy (XPS) reported a maximum of 0.1 eV conduction band offset for the STO/Si interface. It was shown that depending on surface treatment, the valence band offset varies from 2.35 to 2.66 eV for BaTiO 3/Si and 2.38 to 2.64 eV for SRTiO 3/Si heterostructrure. It was suggested that the BaTiO 3/Si and SrTiO 3/Si interfaces underwent significant chemical changes during surface cleaning of the oxide film.",

author = "F. Amy and Wan, {A. S.} and A. Kahn and Walker, {F. J.} and McKee, {R. A.}",

note = "Funding Information: This work was supported by the MRSEC program of the National Science Foundation (Award No. DMR-0213706). ",

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TY - JOUR

T1 - Band offsets at heterojunctions between SrTiO 3 and BaTiO 3 and Si(100)

AU - Amy, F.

AU - Wan, A. S.

AU - Kahn, A.

AU - Walker, F. J.

AU - McKee, R. A.

N1 - Funding Information: This work was supported by the MRSEC program of the National Science Foundation (Award No. DMR-0213706).

PY - 2004/8/1

Y1 - 2004/8/1

N2 - The use of thin films epitaxially grown on Si(100) substrates, to investigate band discontinuities at the SrTiO 3/Si and BaTiO 3/Si heterojunctions, was discussed. It was observed that x-ray photoemission spectroscopy (XPS) reported a maximum of 0.1 eV conduction band offset for the STO/Si interface. It was shown that depending on surface treatment, the valence band offset varies from 2.35 to 2.66 eV for BaTiO 3/Si and 2.38 to 2.64 eV for SRTiO 3/Si heterostructrure. It was suggested that the BaTiO 3/Si and SrTiO 3/Si interfaces underwent significant chemical changes during surface cleaning of the oxide film.

AB - The use of thin films epitaxially grown on Si(100) substrates, to investigate band discontinuities at the SrTiO 3/Si and BaTiO 3/Si heterojunctions, was discussed. It was observed that x-ray photoemission spectroscopy (XPS) reported a maximum of 0.1 eV conduction band offset for the STO/Si interface. It was shown that depending on surface treatment, the valence band offset varies from 2.35 to 2.66 eV for BaTiO 3/Si and 2.38 to 2.64 eV for SRTiO 3/Si heterostructrure. It was suggested that the BaTiO 3/Si and SrTiO 3/Si interfaces underwent significant chemical changes during surface cleaning of the oxide film.

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JF - Journal of Applied Physics

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Band offsets at heterojunctions between SrTiO ₃ and BaTiO ₃ and Si(100)

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