Band lineup at an organic-inorganic semiconductor heterointerface: Perylenetetracarboxylic dianhydride/GaAs(100)

Y. Hirose; W. Chen; E. I. Haskal; S. R. Forrest; Antoine Kahn

doi:10.1063/1.111247

Band lineup at an organic-inorganic semiconductor heterointerface: Perylenetetracarboxylic dianhydride/GaAs(100)

Y. Hirose, W. Chen, E. I. Haskal, S. R. Forrest, Antoine Kahn

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76 Scopus citations

Abstract

We present a photoemission study of the electronic properties of an interface between the organic semiconductor; 3, 4, 9,10 perylenetetracarboxylic dianhydride (PTCDA) and n-type GaAs(100). We examine the evolution of the interface electron distribution as a function of PTCDA overlayer thickness. The highest occupied molecular orbital level of PTCDA is measured at 0.7±0.1 eV below the GaAs valence band maximum. The PTCDA ionization potential is measured at 6.4±0.15 eV. The discrepancy between the band alignment deduced from photoemission and transport measurement suggests that interface states or polarization effects play a role in determining the transport properties of the organic-inorganic heterojunction diodes.

Original language	English (US)
Pages (from-to)	3482-3484
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	25
DOIs	https://doi.org/10.1063/1.111247
State	Published - 1994

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.111247

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title = "Band lineup at an organic-inorganic semiconductor heterointerface: Perylenetetracarboxylic dianhydride/GaAs(100)",

abstract = "We present a photoemission study of the electronic properties of an interface between the organic semiconductor; 3, 4, 9,10 perylenetetracarboxylic dianhydride (PTCDA) and n-type GaAs(100). We examine the evolution of the interface electron distribution as a function of PTCDA overlayer thickness. The highest occupied molecular orbital level of PTCDA is measured at 0.7±0.1 eV below the GaAs valence band maximum. The PTCDA ionization potential is measured at 6.4±0.15 eV. The discrepancy between the band alignment deduced from photoemission and transport measurement suggests that interface states or polarization effects play a role in determining the transport properties of the organic-inorganic heterojunction diodes.",

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year = "1994",

doi = "10.1063/1.111247",

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pages = "3482--3484",

journal = "Applied Physics Letters",

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T1 - Band lineup at an organic-inorganic semiconductor heterointerface

T2 - Perylenetetracarboxylic dianhydride/GaAs(100)

AU - Hirose, Y.

AU - Chen, W.

AU - Haskal, E. I.

AU - Forrest, S. R.

AU - Kahn, Antoine

PY - 1994

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N2 - We present a photoemission study of the electronic properties of an interface between the organic semiconductor; 3, 4, 9,10 perylenetetracarboxylic dianhydride (PTCDA) and n-type GaAs(100). We examine the evolution of the interface electron distribution as a function of PTCDA overlayer thickness. The highest occupied molecular orbital level of PTCDA is measured at 0.7±0.1 eV below the GaAs valence band maximum. The PTCDA ionization potential is measured at 6.4±0.15 eV. The discrepancy between the band alignment deduced from photoemission and transport measurement suggests that interface states or polarization effects play a role in determining the transport properties of the organic-inorganic heterojunction diodes.

AB - We present a photoemission study of the electronic properties of an interface between the organic semiconductor; 3, 4, 9,10 perylenetetracarboxylic dianhydride (PTCDA) and n-type GaAs(100). We examine the evolution of the interface electron distribution as a function of PTCDA overlayer thickness. The highest occupied molecular orbital level of PTCDA is measured at 0.7±0.1 eV below the GaAs valence band maximum. The PTCDA ionization potential is measured at 6.4±0.15 eV. The discrepancy between the band alignment deduced from photoemission and transport measurement suggests that interface states or polarization effects play a role in determining the transport properties of the organic-inorganic heterojunction diodes.

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JF - Applied Physics Letters

IS - 25

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Band lineup at an organic-inorganic semiconductor heterointerface: Perylenetetracarboxylic dianhydride/GaAs(100)

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