Band lineup at an organic-inorganic semiconductor heterointerface: Perylenetetracarboxylic dianhydride/GaAs(100)

Y. Hirose, W. Chen, E. I. Haskal, S. R. Forrest, Antoine Kahn

Research output: Contribution to journalArticle

75 Scopus citations

Abstract

We present a photoemission study of the electronic properties of an interface between the organic semiconductor; 3, 4, 9,10 perylenetetracarboxylic dianhydride (PTCDA) and n-type GaAs(100). We examine the evolution of the interface electron distribution as a function of PTCDA overlayer thickness. The highest occupied molecular orbital level of PTCDA is measured at 0.7±0.1 eV below the GaAs valence band maximum. The PTCDA ionization potential is measured at 6.4±0.15 eV. The discrepancy between the band alignment deduced from photoemission and transport measurement suggests that interface states or polarization effects play a role in determining the transport properties of the organic-inorganic heterojunction diodes.

Original languageEnglish (US)
Pages (from-to)3482-3484
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number25
DOIs
StatePublished - Dec 1 1994

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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