Band-gap shifts in silicon-germanium heterojunction bipolar transistors

J. C. Sturm; E. J. Prinz; P. M. Garone; P. V. Schwartz

doi:10.1063/1.101003

Band-gap shifts in silicon-germanium heterojunction bipolar transistors

J. C. Sturm, E. J. Prinz, P. M. Garone, P. V. Schwartz

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18 Scopus citations

Abstract

The band gap of the base of Si_1-xGe_x strained-layer base heterojunction bipolar transistors has been investigated using minority-carrier transport measurements. We have found a band-gap reduction of 131 meV for a base of Si_0.82Ge_0.18, which is in reasonable agreement with theoretical calculations. Our measurements for a base of Si _0.85Ge_0.15 show a band-gap reduction less than predicted, suggesting a reduction of strain in the structure.

Original language	English (US)
Pages (from-to)	2707-2709
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	26
DOIs	https://doi.org/10.1063/1.101003
State	Published - 1989

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.101003

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abstract = "The band gap of the base of Si1-xGex strained-layer base heterojunction bipolar transistors has been investigated using minority-carrier transport measurements. We have found a band-gap reduction of 131 meV for a base of Si0.82Ge0.18, which is in reasonable agreement with theoretical calculations. Our measurements for a base of Si 0.85Ge0.15 show a band-gap reduction less than predicted, suggesting a reduction of strain in the structure.",

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AU - Sturm, J. C.

AU - Prinz, E. J.

AU - Garone, P. M.

AU - Schwartz, P. V.

PY - 1989

Y1 - 1989

N2 - The band gap of the base of Si1-xGex strained-layer base heterojunction bipolar transistors has been investigated using minority-carrier transport measurements. We have found a band-gap reduction of 131 meV for a base of Si0.82Ge0.18, which is in reasonable agreement with theoretical calculations. Our measurements for a base of Si 0.85Ge0.15 show a band-gap reduction less than predicted, suggesting a reduction of strain in the structure.

AB - The band gap of the base of Si1-xGex strained-layer base heterojunction bipolar transistors has been investigated using minority-carrier transport measurements. We have found a band-gap reduction of 131 meV for a base of Si0.82Ge0.18, which is in reasonable agreement with theoretical calculations. Our measurements for a base of Si 0.85Ge0.15 show a band-gap reduction less than predicted, suggesting a reduction of strain in the structure.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Band-gap shifts in silicon-germanium heterojunction bipolar transistors

Abstract

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