Band-gap shifts in silicon-germanium heterojunction bipolar transistors

James Christopher Sturm, E. J. Prinz, P. M. Garone, P. V. Schwartz

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

The band gap of the base of Si1-xGex strained-layer base heterojunction bipolar transistors has been investigated using minority-carrier transport measurements. We have found a band-gap reduction of 131 meV for a base of Si0.82Ge0.18, which is in reasonable agreement with theoretical calculations. Our measurements for a base of Si 0.85Ge0.15 show a band-gap reduction less than predicted, suggesting a reduction of strain in the structure.

Original languageEnglish (US)
Pages (from-to)2707-2709
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number26
DOIs
StatePublished - Dec 1 1989

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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