Band-gap shifts in silicon-germanium heterojunction bipolar transistors

J. C. Sturm; E. J. Prinz; P. M. Garone; P. V. Schwartz

doi:10.1063/1.101003

Band-gap shifts in silicon-germanium heterojunction bipolar transistors

J. C. Sturm, E. J. Prinz, P. M. Garone, P. V. Schwartz

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The band gap of the base of Si_1-xGe_x strained-layer base heterojunction bipolar transistors has been investigated using minority-carrier transport measurements. We have found a band-gap reduction of 131 meV for a base of Si_0.82Ge_0.18, which is in reasonable agreement with theoretical calculations. Our measurements for a base of Si _0.85Ge_0.15 show a band-gap reduction less than predicted, suggesting a reduction of strain in the structure.

Original language	English (US)
Pages (from-to)	2707-2709
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	26
DOIs	https://doi.org/10.1063/1.101003
State	Published - 1989

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.101003

Cite this

@article{fdf7dc09223949d4936aa36fbef4f5a8,

title = "Band-gap shifts in silicon-germanium heterojunction bipolar transistors",

abstract = "The band gap of the base of Si1-xGex strained-layer base heterojunction bipolar transistors has been investigated using minority-carrier transport measurements. We have found a band-gap reduction of 131 meV for a base of Si0.82Ge0.18, which is in reasonable agreement with theoretical calculations. Our measurements for a base of Si 0.85Ge0.15 show a band-gap reduction less than predicted, suggesting a reduction of strain in the structure.",

author = "Sturm, {J. C.} and Prinz, {E. J.} and Garone, {P. M.} and Schwartz, {P. V.}",

year = "1989",

doi = "10.1063/1.101003",

language = "English (US)",

volume = "54",

pages = "2707--2709",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "26",

}

TY - JOUR

T1 - Band-gap shifts in silicon-germanium heterojunction bipolar transistors

AU - Sturm, J. C.

AU - Prinz, E. J.

AU - Garone, P. M.

AU - Schwartz, P. V.

PY - 1989

Y1 - 1989

N2 - The band gap of the base of Si1-xGex strained-layer base heterojunction bipolar transistors has been investigated using minority-carrier transport measurements. We have found a band-gap reduction of 131 meV for a base of Si0.82Ge0.18, which is in reasonable agreement with theoretical calculations. Our measurements for a base of Si 0.85Ge0.15 show a band-gap reduction less than predicted, suggesting a reduction of strain in the structure.

AB - The band gap of the base of Si1-xGex strained-layer base heterojunction bipolar transistors has been investigated using minority-carrier transport measurements. We have found a band-gap reduction of 131 meV for a base of Si0.82Ge0.18, which is in reasonable agreement with theoretical calculations. Our measurements for a base of Si 0.85Ge0.15 show a band-gap reduction less than predicted, suggesting a reduction of strain in the structure.

UR - http://www.scopus.com/inward/record.url?scp=3042910520&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3042910520&partnerID=8YFLogxK

U2 - 10.1063/1.101003

DO - 10.1063/1.101003

M3 - Article

AN - SCOPUS:3042910520

SN - 0003-6951

VL - 54

SP - 2707

EP - 2709

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Band-gap shifts in silicon-germanium heterojunction bipolar transistors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this