Band-edge divergence and Fermi-edge singularity in an n-type doped T-shaped quantum wire

T. Ihara, M. Yoshita, H. Akiyama, L. N. Pfeiffer, K. W. West

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We studied photoluminescence-excitation (PLE) spectra of one-dimensional (1D) electron systems in an n-type modulation-doped single quantum wire at various temperatures from 5K to 50K. At low temperature (5K), we observed a single absorption onset, which corresponds to the Fermi edge of degenerate 1D electron gas. As the temperature was increased, this Fermi-edge absorption onset disappeared, while another absorption onset appeared at lower energy, which became a sharp peak at 50K. We assigned this peak to the 1D band-edge absorption induced by the inverse square root divergence of 1D density of states (DOS).

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages863-864
Number of pages2
DOIs
StatePublished - 2007
Externally publishedYes
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: Jul 24 2006Jul 28 2006

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/TerritoryAustria
CityVienna
Period7/24/067/28/06

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

Keywords

  • Electron density of states
  • Fermi-edge singularity
  • Photoluminescence
  • Quantum wires

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