Ballistic transport of (001) GaAs two-dimensional holes through a strain-induced lateral superlattice

D. Kamburov, H. Shapourian, M. Shayegan, L. N. Pfeiffer, K. W. West, K. W. Baldwin, R. Winkler

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

We report the observation of ballistic commensurability oscillations and positive magnetoresistance in a high-mobility, (001) GaAs two-dimensional hole system with a unidirectional, surface-strain-induced, periodic potential modulation. The positions of the resistivity minima agree well with the electrostatic commensurability condition. From an analysis of the amplitude of the oscillations we deduce a ballistic scattering time and an effective magnitude for the induced periodic potential seen by the two-dimensional holes.

Original languageEnglish (US)
Article number121305
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume85
Issue number12
DOIs
StatePublished - Mar 28 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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