Abstract
We report ballistic hole conduction in 2 μm long GaAs quantum wires of nominal cross-section 15 nm by 15 nm. In each of eight test wires, we observe several quantized conduction steps of approximate height 0.77 e2 h. The wires were fabricated using the cleaved edge overgrowth molecular-beam epitaxy process, and the modulation-doped acceptors were incorporated using a carbon filament as the source of atomic carbon.
Original language | English (US) |
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Article number | 073111 |
Journal | Applied Physics Letters |
Volume | 87 |
Issue number | 7 |
DOIs | |
State | Published - Aug 15 2005 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)