Abstract
We demonstrate a method to directly measure the ballistic mean free path λb of electrons in ultrahigh mobility GaAs/AlGaAs heterostructures. λ0 and the elastic mean free path from mobility measurements λmicro are measured and compared over the temperature range 0.3-10 K. We also demonstrate that ballistic electrons in these systems can be electrostatically refracted in structures ≳ 10 microm in size, however, problems arise when the refractive structures are reduced to length scales on the order of a few micrometers.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 240-246 |
| Number of pages | 7 |
| Journal | Surface Science |
| Volume | 263 |
| Issue number | 1-3 |
| DOIs | |
| State | Published - Feb 19 1992 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
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