Ballistic electron optics

J. Spector; J. S. Weiner; H. L. Stormer; K. W. Baldwin; L. N. Pfeiffer; K. W. West

doi:10.1016/0039-6028(92)90344-6

Ballistic electron optics

J. Spector, J. S. Weiner, H. L. Stormer, K. W. Baldwin, L. N. Pfeiffer, K. W. West

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We demonstrate a method to directly measure the ballistic mean free path λ_b of electrons in ultrahigh mobility GaAs/AlGaAs heterostructures. λ₀ and the elastic mean free path from mobility measurements λ_micro are measured and compared over the temperature range 0.3-10 K. We also demonstrate that ballistic electrons in these systems can be electrostatically refracted in structures ≳ 10 microm in size, however, problems arise when the refractive structures are reduced to length scales on the order of a few micrometers.

Original language	English (US)
Pages (from-to)	240-246
Number of pages	7
Journal	Surface Science
Volume	263
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(92)90344-6
State	Published - Feb 19 1992
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(92)90344-6

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abstract = "We demonstrate a method to directly measure the ballistic mean free path λb of electrons in ultrahigh mobility GaAs/AlGaAs heterostructures. λ0 and the elastic mean free path from mobility measurements λmicro are measured and compared over the temperature range 0.3-10 K. We also demonstrate that ballistic electrons in these systems can be electrostatically refracted in structures ≳ 10 microm in size, however, problems arise when the refractive structures are reduced to length scales on the order of a few micrometers.",

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T1 - Ballistic electron optics

AU - Spector, J.

AU - Weiner, J. S.

AU - Stormer, H. L.

AU - Baldwin, K. W.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 1992/2/19

Y1 - 1992/2/19

N2 - We demonstrate a method to directly measure the ballistic mean free path λb of electrons in ultrahigh mobility GaAs/AlGaAs heterostructures. λ0 and the elastic mean free path from mobility measurements λmicro are measured and compared over the temperature range 0.3-10 K. We also demonstrate that ballistic electrons in these systems can be electrostatically refracted in structures ≳ 10 microm in size, however, problems arise when the refractive structures are reduced to length scales on the order of a few micrometers.

AB - We demonstrate a method to directly measure the ballistic mean free path λb of electrons in ultrahigh mobility GaAs/AlGaAs heterostructures. λ0 and the elastic mean free path from mobility measurements λmicro are measured and compared over the temperature range 0.3-10 K. We also demonstrate that ballistic electrons in these systems can be electrostatically refracted in structures ≳ 10 microm in size, however, problems arise when the refractive structures are reduced to length scales on the order of a few micrometers.

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VL - 263

SP - 240

EP - 246

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Ballistic electron optics

Abstract

All Science Journal Classification (ASJC) codes

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