Ballistic electron luminescence spectroscopy

S. A. Lyon; C. L. Petersen

doi:10.1088/0268-1242/7/3B/005

Ballistic electron luminescence spectroscopy

S. A. Lyon, C. L. Petersen

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The new technique of ballistic electron luminescence spectroscopy (BELS) is discussed, and applied in several situations. The authors describe the use of BELS to determine the conduction band offset in Al_xGa _1-xAs/GaAs heterostructures and the ballistic range of electrons in undoped GaAs. The range for the emission of longitudinal optical (LO) phonons is found to be approximately 1000 AA for electrons with an initial kinetic energy of about 250 meV.

Original language	English (US)
Article number	005
Pages (from-to)	B21-B25
Journal	Semiconductor Science and Technology
Volume	7
Issue number	3 B
DOIs	https://doi.org/10.1088/0268-1242/7/3B/005
State	Published - 1992

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/0268-1242/7/3B/005

Cite this

@article{a98a8b66f871428e883a3390ad9e4232,

title = "Ballistic electron luminescence spectroscopy",

abstract = "The new technique of ballistic electron luminescence spectroscopy (BELS) is discussed, and applied in several situations. The authors describe the use of BELS to determine the conduction band offset in AlxGa 1-xAs/GaAs heterostructures and the ballistic range of electrons in undoped GaAs. The range for the emission of longitudinal optical (LO) phonons is found to be approximately 1000 AA for electrons with an initial kinetic energy of about 250 meV.",

author = "Lyon, {S. A.} and Petersen, {C. L.}",

year = "1992",

doi = "10.1088/0268-1242/7/3B/005",

language = "English (US)",

volume = "7",

pages = "B21--B25",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "3 B",

}

TY - JOUR

T1 - Ballistic electron luminescence spectroscopy

AU - Lyon, S. A.

AU - Petersen, C. L.

PY - 1992

Y1 - 1992

N2 - The new technique of ballistic electron luminescence spectroscopy (BELS) is discussed, and applied in several situations. The authors describe the use of BELS to determine the conduction band offset in AlxGa 1-xAs/GaAs heterostructures and the ballistic range of electrons in undoped GaAs. The range for the emission of longitudinal optical (LO) phonons is found to be approximately 1000 AA for electrons with an initial kinetic energy of about 250 meV.

AB - The new technique of ballistic electron luminescence spectroscopy (BELS) is discussed, and applied in several situations. The authors describe the use of BELS to determine the conduction band offset in AlxGa 1-xAs/GaAs heterostructures and the ballistic range of electrons in undoped GaAs. The range for the emission of longitudinal optical (LO) phonons is found to be approximately 1000 AA for electrons with an initial kinetic energy of about 250 meV.

UR - http://www.scopus.com/inward/record.url?scp=0026838178&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026838178&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/7/3B/005

DO - 10.1088/0268-1242/7/3B/005

M3 - Article

AN - SCOPUS:0026838178

SN - 0268-1242

VL - 7

SP - B21-B25

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 3 B

M1 - 005

ER -

Ballistic electron luminescence spectroscopy

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this