Ballistic electron luminescence spectroscopy

S. A. Lyon, C. L. Petersen

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

The new technique of ballistic electron luminescence spectroscopy (BELS) is discussed, and applied in several situations. The authors describe the use of BELS to determine the conduction band offset in AlxGa 1-xAs/GaAs heterostructures and the ballistic range of electrons in undoped GaAs. The range for the emission of longitudinal optical (LO) phonons is found to be approximately 1000 AA for electrons with an initial kinetic energy of about 250 meV.

Original languageEnglish (US)
Article number005
Pages (from-to)B21-B25
JournalSemiconductor Science and Technology
Volume7
Issue number3 B
DOIs
StatePublished - Dec 1 1992

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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