Ballistic electron luminescence spectroscopy

S. A. Lyon; C. L. Petersen

doi:10.1088/0268-1242/7/3B/005

Ballistic electron luminescence spectroscopy

S. A. Lyon, C. L. Petersen

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9 Scopus citations

Abstract

The new technique of ballistic electron luminescence spectroscopy (BELS) is discussed, and applied in several situations. The authors describe the use of BELS to determine the conduction band offset in Al_xGa _1-xAs/GaAs heterostructures and the ballistic range of electrons in undoped GaAs. The range for the emission of longitudinal optical (LO) phonons is found to be approximately 1000 AA for electrons with an initial kinetic energy of about 250 meV.

Original language	English (US)
Article number	005
Pages (from-to)	B21-B25
Journal	Semiconductor Science and Technology
Volume	7
Issue number	3 B
DOIs	https://doi.org/10.1088/0268-1242/7/3B/005
State	Published - Dec 1 1992

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/7/3B/005

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title = "Ballistic electron luminescence spectroscopy",

abstract = "The new technique of ballistic electron luminescence spectroscopy (BELS) is discussed, and applied in several situations. The authors describe the use of BELS to determine the conduction band offset in AlxGa 1-xAs/GaAs heterostructures and the ballistic range of electrons in undoped GaAs. The range for the emission of longitudinal optical (LO) phonons is found to be approximately 1000 AA for electrons with an initial kinetic energy of about 250 meV.",

author = "Lyon, {S. A.} and Petersen, {C. L.}",

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AU - Petersen, C. L.

PY - 1992/12/1

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N2 - The new technique of ballistic electron luminescence spectroscopy (BELS) is discussed, and applied in several situations. The authors describe the use of BELS to determine the conduction band offset in AlxGa 1-xAs/GaAs heterostructures and the ballistic range of electrons in undoped GaAs. The range for the emission of longitudinal optical (LO) phonons is found to be approximately 1000 AA for electrons with an initial kinetic energy of about 250 meV.

AB - The new technique of ballistic electron luminescence spectroscopy (BELS) is discussed, and applied in several situations. The authors describe the use of BELS to determine the conduction band offset in AlxGa 1-xAs/GaAs heterostructures and the ballistic range of electrons in undoped GaAs. The range for the emission of longitudinal optical (LO) phonons is found to be approximately 1000 AA for electrons with an initial kinetic energy of about 250 meV.

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Ballistic electron luminescence spectroscopy

Abstract

All Science Journal Classification (ASJC) codes

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