Auger and radiative recombination of acceptor bound excitons in semiconductors

G. C. Osbourn; S. A. Lyon; K. R. Elliott; D. L. Smith; T. C. McGill

doi:10.1016/0038-1101(78)90203-4

Auger and radiative recombination of acceptor bound excitons in semiconductors

G. C. Osbourn, S. A. Lyon, K. R. Elliott, D. L. Smith, T. C. McGill

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We report on a theoretical and experimental study of acceptor bound exciton recombination. We present calculations of phononless Auger and radiative recombination in direct and indirect band gap materials. We consider hydrogenic acceptors in the direct band gap material Hg_1-xCd_xTe in which the band gap can be varied by changing alloy composition. We present calculations of the Auger transition rate and no-phonon oscillator strengths for the common acceptors in Si and Ge. We have measured the bound exciton lifetimes and no-phonon oscillator strengths for the acceptors in Si and find reasonable agreement with the calculated values.

Original language	English (US)
Pages (from-to)	1339-1342
Number of pages	4
Journal	Solid State Electronics
Volume	21
Issue number	11-12
DOIs	https://doi.org/10.1016/0038-1101(78)90203-4
State	Published - 1978
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(78)90203-4

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title = "Auger and radiative recombination of acceptor bound excitons in semiconductors",

abstract = "We report on a theoretical and experimental study of acceptor bound exciton recombination. We present calculations of phononless Auger and radiative recombination in direct and indirect band gap materials. We consider hydrogenic acceptors in the direct band gap material Hg1-xCdxTe in which the band gap can be varied by changing alloy composition. We present calculations of the Auger transition rate and no-phonon oscillator strengths for the common acceptors in Si and Ge. We have measured the bound exciton lifetimes and no-phonon oscillator strengths for the acceptors in Si and find reasonable agreement with the calculated values.",

author = "Osbourn, {G. C.} and Lyon, {S. A.} and Elliott, {K. R.} and Smith, {D. L.} and McGill, {T. C.}",

year = "1978",

doi = "10.1016/0038-1101(78)90203-4",

language = "English (US)",

volume = "21",

pages = "1339--1342",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "11-12",

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T1 - Auger and radiative recombination of acceptor bound excitons in semiconductors

AU - Osbourn, G. C.

AU - Lyon, S. A.

AU - Elliott, K. R.

AU - Smith, D. L.

AU - McGill, T. C.

PY - 1978

Y1 - 1978

N2 - We report on a theoretical and experimental study of acceptor bound exciton recombination. We present calculations of phononless Auger and radiative recombination in direct and indirect band gap materials. We consider hydrogenic acceptors in the direct band gap material Hg1-xCdxTe in which the band gap can be varied by changing alloy composition. We present calculations of the Auger transition rate and no-phonon oscillator strengths for the common acceptors in Si and Ge. We have measured the bound exciton lifetimes and no-phonon oscillator strengths for the acceptors in Si and find reasonable agreement with the calculated values.

AB - We report on a theoretical and experimental study of acceptor bound exciton recombination. We present calculations of phononless Auger and radiative recombination in direct and indirect band gap materials. We consider hydrogenic acceptors in the direct band gap material Hg1-xCdxTe in which the band gap can be varied by changing alloy composition. We present calculations of the Auger transition rate and no-phonon oscillator strengths for the common acceptors in Si and Ge. We have measured the bound exciton lifetimes and no-phonon oscillator strengths for the acceptors in Si and find reasonable agreement with the calculated values.

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U2 - 10.1016/0038-1101(78)90203-4

DO - 10.1016/0038-1101(78)90203-4

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SN - 0038-1101

VL - 21

SP - 1339

EP - 1342

JO - Solid State Electronics

JF - Solid State Electronics

IS - 11-12

ER -

Auger and radiative recombination of acceptor bound excitons in semiconductors

Abstract

All Science Journal Classification (ASJC) codes

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