Atomistic simulations of spontàneous etching of silicon by fluorine and chlorine

David Humbird; David B. Graves

doi:10.1063/1.1753657

Atomistic simulations of spontàneous etching of silicon by fluorine and chlorine

David Humbird, David B. Graves

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

The molecular dynamics (MD) simulations of spontaneous etching of Si were analyzed using interatomic potential energy functions for Si-F and Si-Cl. The simulated etch probability was found to be 0.03 for F atoms and 0.005 for Cl at 300 K. The simulation predictions were within the range of measurements of surface coverage, etch reaction probability and etch product distribution at 300 K and below. The results show that SiF ₂ and SiCl ₂ become dominant etch products at higher temperatures.

Original language	English (US)
Pages (from-to)	791-798
Number of pages	8
Journal	Journal of Applied Physics
Volume	96
Issue number	1
DOIs	https://doi.org/10.1063/1.1753657
State	Published - Jul 1 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1063/1.1753657

Cite this

@article{b763a115023942ca9578765ba81b21e8,

title = "Atomistic simulations of spont{\`a}neous etching of silicon by fluorine and chlorine",

abstract = "The molecular dynamics (MD) simulations of spontaneous etching of Si were analyzed using interatomic potential energy functions for Si-F and Si-Cl. The simulated etch probability was found to be 0.03 for F atoms and 0.005 for Cl at 300 K. The simulation predictions were within the range of measurements of surface coverage, etch reaction probability and etch product distribution at 300 K and below. The results show that SiF 2 and SiCl 2 become dominant etch products at higher temperatures.",

author = "David Humbird and Graves, \{David B.\}",

year = "2004",

month = jul,

day = "1",

doi = "10.1063/1.1753657",

language = "English (US)",

volume = "96",

pages = "791--798",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Atomistic simulations of spontàneous etching of silicon by fluorine and chlorine

AU - Humbird, David

AU - Graves, David B.

PY - 2004/7/1

Y1 - 2004/7/1

N2 - The molecular dynamics (MD) simulations of spontaneous etching of Si were analyzed using interatomic potential energy functions for Si-F and Si-Cl. The simulated etch probability was found to be 0.03 for F atoms and 0.005 for Cl at 300 K. The simulation predictions were within the range of measurements of surface coverage, etch reaction probability and etch product distribution at 300 K and below. The results show that SiF 2 and SiCl 2 become dominant etch products at higher temperatures.

AB - The molecular dynamics (MD) simulations of spontaneous etching of Si were analyzed using interatomic potential energy functions for Si-F and Si-Cl. The simulated etch probability was found to be 0.03 for F atoms and 0.005 for Cl at 300 K. The simulation predictions were within the range of measurements of surface coverage, etch reaction probability and etch product distribution at 300 K and below. The results show that SiF 2 and SiCl 2 become dominant etch products at higher temperatures.

UR - https://www.scopus.com/pages/publications/3142782445

UR - https://www.scopus.com/inward/citedby.url?scp=3142782445&partnerID=8YFLogxK

U2 - 10.1063/1.1753657

DO - 10.1063/1.1753657

M3 - Article

AN - SCOPUS:3142782445

SN - 0021-8979

VL - 96

SP - 791

EP - 798

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Atomistic simulations of spontàneous etching of silicon by fluorine and chlorine

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this