The molecular dynamics (MD) simulations of spontaneous etching of Si were analyzed using interatomic potential energy functions for Si-F and Si-Cl. The simulated etch probability was found to be 0.03 for F atoms and 0.005 for Cl at 300 K. The simulation predictions were within the range of measurements of surface coverage, etch reaction probability and etch product distribution at 300 K and below. The results show that SiF 2 and SiCl 2 become dominant etch products at higher temperatures.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)