Abstract
The molecular dynamics (MD) simulations of spontaneous etching of Si were analyzed using interatomic potential energy functions for Si-F and Si-Cl. The simulated etch probability was found to be 0.03 for F atoms and 0.005 for Cl at 300 K. The simulation predictions were within the range of measurements of surface coverage, etch reaction probability and etch product distribution at 300 K and below. The results show that SiF 2 and SiCl 2 become dominant etch products at higher temperatures.
Original language | English (US) |
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Pages (from-to) | 791-798 |
Number of pages | 8 |
Journal | Journal of Applied Physics |
Volume | 96 |
Issue number | 1 |
DOIs | |
State | Published - Jul 1 2004 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy