Atomistic simulations of spontàneous etching of silicon by fluorine and chlorine

David Humbird, David B. Graves

Research output: Contribution to journalArticlepeer-review

52 Scopus citations

Abstract

The molecular dynamics (MD) simulations of spontaneous etching of Si were analyzed using interatomic potential energy functions for Si-F and Si-Cl. The simulated etch probability was found to be 0.03 for F atoms and 0.005 for Cl at 300 K. The simulation predictions were within the range of measurements of surface coverage, etch reaction probability and etch product distribution at 300 K and below. The results show that SiF 2 and SiCl 2 become dominant etch products at higher temperatures.

Original languageEnglish (US)
Pages (from-to)791-798
Number of pages8
JournalJournal of Applied Physics
Volume96
Issue number1
DOIs
StatePublished - Jul 1 2004
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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