Atomic-Scale Spectroscopy of Gated Monolayer MoS₂

Keyphrases

• Atomic Resolution 50%
• Atomic Scale 100%
• Band Gap 50%
• Chemical Vapor Deposition Technique 50%
• Defect Density 50%
• Electronic Properties 50%
• Electronic Signature 50%
• Exciton Binding Energy 50%
• Gate Potential 50%
• Gate Voltage 50%
• Gate-tunable 50%
• Grain Boundary 50%
• In-gap States 50%
• Metal-organic Chemical Vapor Deposition (MOCVD) 50%
• Molybdenite 50%
• Monolayer MoS2 100%
• MoS2 Film 50%
• Numerical Simulation 50%
• Optical Measurement 50%
• Oxide Substrates 50%
• Polycrystalline Samples 50%
• Sample Quality 50%
• Scanning Tunneling Spectroscopy 50%
• Semiconducting Monolayers 50%
• Silicon Oxide 50%
• Single Crystal 50%
• Spectroscopic Measurement 50%
• STM Imaging 50%
• Topography Measurement 50%
• Transition Metal Dichalcogenide Monolayer 50%
• Voltage Dependence 50%

Material Science

• Defect Density 33%
• Density 33%
• Electronic Property 33%
• Film 33%
• Grain Boundary 33%
• Metal-Organic Chemical Vapor Deposition 33%
• Monolayers 100%
• Optical Measurement 33%
• Oxide Compound 33%
• Scanning Tunneling Microscopy 66%
• Silicon 33%
• Single Crystal 33%
• Transition Metal Dichalcogenide 33%