Abstract
We have used a scanning tunneling microscope to demonstrate that a single [Formula presented] plane can form a stable and atomically ordered layer at the surface of [Formula presented]. In contrast to previous studies on high-[Formula presented] surfaces, the [Formula presented]-terminated surface exhibits a strongly suppressed tunneling conductance at low voltages. We consider a number of different explanations for this phenomena and propose that it may be caused by how the orbital symmetry of the [Formula presented] plane’s electronic states affects the tunneling process.
Original language | English (US) |
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Journal | Physical review letters |
Volume | 89 |
Issue number | 8 |
DOIs | |
State | Published - 2002 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy