Atomic geometry of GaAs(110)-p(1×1)-Al

C. B. Duke, A. Paton, R. J. Meyer, L. J. Brillson, A. Kahn, D. Kanani, J. Carelli, J. L. Yeh, G. Margaritondo, A. D. Katnani

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Abstract

An ordered (1×1) structure is formed by evaporating approximately one-half monolayer of Al on GaAs(110) and subsequently annealing at 450°C for 30 min. Both a dynamical analysis of the low-energy electron-diffraction intensities from the resulting half-monolayer of GaAs(110)-p(1×1)-Al structure and soft-x-ray photoemission spectroscopy indicate that the Al replaces the Ga in the second atomic layer beneath the surface. The uppermost layer retains the structure of clean GaAs(110) but is relaxed 0.1 toward the second AlAs layer.

Original languageEnglish (US)
Pages (from-to)440-443
Number of pages4
JournalPhysical review letters
Volume46
Issue number6
DOIs
StatePublished - Jan 1 1981

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Duke, C. B., Paton, A., Meyer, R. J., Brillson, L. J., Kahn, A., Kanani, D., Carelli, J., Yeh, J. L., Margaritondo, G., & Katnani, A. D. (1981). Atomic geometry of GaAs(110)-p(1×1)-Al. Physical review letters, 46(6), 440-443. https://doi.org/10.1103/PhysRevLett.46.440