Atomic geometry of GaAs(110)-p(1×1)-Al

C. B. Duke; A. Paton; R. J. Meyer; L. J. Brillson; A. Kahn; D. Kanani; J. Carelli; J. L. Yeh; G. Margaritondo; A. D. Katnani

doi:10.1103/PhysRevLett.46.440

Atomic geometry of GaAs(110)-p(1×1)-Al

C. B. Duke, A. Paton, R. J. Meyer, L. J. Brillson, A. Kahn, D. Kanani, J. Carelli, J. L. Yeh, G. Margaritondo, A. D. Katnani

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Abstract

An ordered (1×1) structure is formed by evaporating approximately one-half monolayer of Al on GaAs(110) and subsequently annealing at 450°C for 30 min. Both a dynamical analysis of the low-energy electron-diffraction intensities from the resulting half-monolayer of GaAs(110)-p(1×1)-Al structure and soft-x-ray photoemission spectroscopy indicate that the Al replaces the Ga in the second atomic layer beneath the surface. The uppermost layer retains the structure of clean GaAs(110) but is relaxed 0.1 toward the second AlAs layer.

Original language	English (US)
Pages (from-to)	440-443
Number of pages	4
Journal	Physical review letters
Volume	46
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevLett.46.440
State	Published - 1981

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1103/PhysRevLett.46.440

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title = "Atomic geometry of GaAs(110)-p(1×1)-Al",

abstract = "An ordered (1×1) structure is formed by evaporating approximately one-half monolayer of Al on GaAs(110) and subsequently annealing at 450°C for 30 min. Both a dynamical analysis of the low-energy electron-diffraction intensities from the resulting half-monolayer of GaAs(110)-p(1×1)-Al structure and soft-x-ray photoemission spectroscopy indicate that the Al replaces the Ga in the second atomic layer beneath the surface. The uppermost layer retains the structure of clean GaAs(110) but is relaxed 0.1 toward the second AlAs layer.",

author = "Duke, {C. B.} and A. Paton and Meyer, {R. J.} and Brillson, {L. J.} and A. Kahn and D. Kanani and J. Carelli and Yeh, {J. L.} and G. Margaritondo and Katnani, {A. D.}",

year = "1981",

doi = "10.1103/PhysRevLett.46.440",

language = "English (US)",

volume = "46",

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journal = "Physical review letters",

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T1 - Atomic geometry of GaAs(110)-p(1×1)-Al

AU - Duke, C. B.

AU - Paton, A.

AU - Meyer, R. J.

AU - Brillson, L. J.

AU - Kahn, A.

AU - Kanani, D.

AU - Carelli, J.

AU - Yeh, J. L.

AU - Margaritondo, G.

AU - Katnani, A. D.

PY - 1981

Y1 - 1981

N2 - An ordered (1×1) structure is formed by evaporating approximately one-half monolayer of Al on GaAs(110) and subsequently annealing at 450°C for 30 min. Both a dynamical analysis of the low-energy electron-diffraction intensities from the resulting half-monolayer of GaAs(110)-p(1×1)-Al structure and soft-x-ray photoemission spectroscopy indicate that the Al replaces the Ga in the second atomic layer beneath the surface. The uppermost layer retains the structure of clean GaAs(110) but is relaxed 0.1 toward the second AlAs layer.

AB - An ordered (1×1) structure is formed by evaporating approximately one-half monolayer of Al on GaAs(110) and subsequently annealing at 450°C for 30 min. Both a dynamical analysis of the low-energy electron-diffraction intensities from the resulting half-monolayer of GaAs(110)-p(1×1)-Al structure and soft-x-ray photoemission spectroscopy indicate that the Al replaces the Ga in the second atomic layer beneath the surface. The uppermost layer retains the structure of clean GaAs(110) but is relaxed 0.1 toward the second AlAs layer.

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DO - 10.1103/PhysRevLett.46.440

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EP - 443

JO - Physical review letters

JF - Physical review letters

IS - 6

ER -

Atomic geometry of GaAs(110)-p(1×1)-Al

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