Atomic geometry of GaAs(110)-p(1×1)-Al

C. B. Duke, A. Paton, R. J. Meyer, L. J. Brillson, A. Kahn, D. Kanani, J. Carelli, J. L. Yeh, G. Margaritondo, A. D. Katnani

Research output: Contribution to journalArticlepeer-review

57 Scopus citations


An ordered (1×1) structure is formed by evaporating approximately one-half monolayer of Al on GaAs(110) and subsequently annealing at 450°C for 30 min. Both a dynamical analysis of the low-energy electron-diffraction intensities from the resulting half-monolayer of GaAs(110)-p(1×1)-Al structure and soft-x-ray photoemission spectroscopy indicate that the Al replaces the Ga in the second atomic layer beneath the surface. The uppermost layer retains the structure of clean GaAs(110) but is relaxed 0.1 toward the second AlAs layer.

Original languageEnglish (US)
Pages (from-to)440-443
Number of pages4
JournalPhysical review letters
Issue number6
StatePublished - 1981

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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