ATOMIC GEOMETRY OF Al-GaAs INTERFACES: GaAs (110)-p(1 multiplied by 1)-Al( theta ), 0 less than equivalent to theta less than equivalent to 8. 5 MONOLAYERS.

Keyphrases

• Level Measurement 50%
• Thermal Desorption 50%
• Soft X-ray Photoelectron Spectroscopy 50%
• Chemical Shift 50%
• Heat-induced 50%
• Scattering Analysis 50%

Material Science

• Gallium Arsenide 100%
• Low-Energy Electron Diffraction 66%
• Photoemission Spectroscopy 33%
• Monolayers 33%
• Desorption 33%
• Atomic Structure 33%