The atomic structure of Al on GaAs(110) is examined by soft x-ray photoemission spectroscopy (SXPS) and elastic low energy electron diffraction (ELEED) for coverages ranging from 0. 5 to 8. 5 monolayers (ML). The core level measurements show a heat-induced chemical shift of Al-2p to higher binding energy consistent with an Al-Ga replacement reaction and the formation of AlAs, and a decrease in emission from Al-2p and Ga-3d, indicating a penetration of Al in the lattice and thermal desorption or formation of islands of Ga freed by the replacement reaction. The ELEED multiple scattering analysis yields a correspondence between the initial experimental coverage and the structure of the interface.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of vacuum science & technology|
|State||Published - 1981|
|Event||Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA|
Duration: Jan 27 1981 → Jan 29 1981
All Science Journal Classification (ASJC) codes