ATOMIC GEOMETRY OF Al-GaAs INTERFACES: GaAs (110)-p(1 multiplied by 1)-Al( theta ), 0 less than equivalent to theta less than equivalent to 8. 5 MONOLAYERS.

Antoine Kahn, J. Carelli, D. Kanani, C. B. Duke, A. Paton, L. Brillson

Research output: Contribution to journalConference article

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Abstract

The atomic structure of Al on GaAs(110) is examined by soft x-ray photoemission spectroscopy (SXPS) and elastic low energy electron diffraction (ELEED) for coverages ranging from 0. 5 to 8. 5 monolayers (ML). The core level measurements show a heat-induced chemical shift of Al-2p to higher binding energy consistent with an Al-Ga replacement reaction and the formation of AlAs, and a decrease in emission from Al-2p and Ga-3d, indicating a penetration of Al in the lattice and thermal desorption or formation of islands of Ga freed by the replacement reaction. The ELEED multiple scattering analysis yields a correspondence between the initial experimental coverage and the structure of the interface.

Original languageEnglish (US)
Pages (from-to)331-334
Number of pages4
JournalJournal of vacuum science & technology
Volume19
Issue number3
DOIs
StatePublished - Jan 1 1981
EventProc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA
Duration: Jan 27 1981Jan 29 1981

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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