Atomic geometries of zincblende compound semiconductor surfaces are reviewed in the light of recent work done on (111) and (311) GaAs surfaces. The geometries derived from low-energy electron diffraction and from energy-minimization calculations, and electron energy-loss spectroscopy data on the surface electronic transitions indicate that the microscopic structures of the (110), (111)-A and (311)-B surfaces have common features and suggest that similar bond rehybridization mechanisms dominate atomic displacements at these surfaces.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry