Atomic geometries of zincblende compound semiconductor surfaces: Similarities in surface rehybridizations

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Abstract

Atomic geometries of zincblende compound semiconductor surfaces are reviewed in the light of recent work done on (111) and (311) GaAs surfaces. The geometries derived from low-energy electron diffraction and from energy-minimization calculations, and electron energy-loss spectroscopy data on the surface electronic transitions indicate that the microscopic structures of the (110), (111)-A and (311)-B surfaces have common features and suggest that similar bond rehybridization mechanisms dominate atomic displacements at these surfaces.

Original languageEnglish (US)
Pages (from-to)1-15
Number of pages15
JournalSurface Science
Volume168
Issue number1-3
DOIs
StatePublished - Mar 3 1986

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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