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Atomic geometries of compound semiconductor surfaces and interfaces
Antoine Kahn
Electrical and Computer Engineering
School of Engineering & Applied Science
Princeton Institute for Computational Science and Engineering
Princeton Institute for the Science and Technology of Materials
Research output
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Contribution to journal
›
Article
›
peer-review
29
Scopus citations
Overview
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Engineering & Materials Science
Annealing
100%
Semiconductor materials
89%
Crystal atomic structure
72%
Substrates
71%
Surface relaxation
66%
Crystals
66%
Adatoms
64%
Geometry
61%
Lattice constants
49%
Metals
43%
Positive ions
41%
Desorption
38%
Crystallization
36%
Relaxation
31%
Physics & Astronomy
atomic structure
75%
geometry
56%
annealing
45%
metals
25%
adatoms
25%
reactivity
25%
crystals
24%
contraction
24%
desorption
22%
cations
21%
crystallization
19%
configurations
13%
electronics
13%
Chemical Compounds
Semiconductor
76%
Annealing
59%
Surface Relaxation
39%
Bond Rotation
35%
Surface
32%
Adatoms
30%
Lattice Constant
28%
Desorption
19%
Crystallization
17%
Metal Ion
15%
Metal
11%