The chemical sputtering yield of Olin 10i i-line PR was measured using an oxygen ion beam and a fluorine atom beam over a range of fluorine atom to oxygen ion flux ratios. As such, the etch yield was found to be consistently higher than that previously measured for samples bombarded with argon ions and fluorine atoms. The data were fit using a modified form of the phenomenological model developed to describe the previous argon etch yield experiments. When the oxygen ion results were compared to those with argon ions, it was found that the ratio of the two etch yields was a function of the fluorine atom to ion flux ratio.
|Original language||English (US)|
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Sep 2002|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering