Argon and oxygen ion chemistry effects in photoresist etching

Frank Greer; L. Van; D. Fraser; J. W. Coburn; David B. Graves

doi:10.1116/1.1501578

Argon and oxygen ion chemistry effects in photoresist etching

Frank Greer, L. Van, D. Fraser, J. W. Coburn, David B. Graves

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The chemical sputtering yield of Olin 10i i-line PR was measured using an oxygen ion beam and a fluorine atom beam over a range of fluorine atom to oxygen ion flux ratios. As such, the etch yield was found to be consistently higher than that previously measured for samples bombarded with argon ions and fluorine atoms. The data were fit using a modified form of the phenomenological model developed to describe the previous argon etch yield experiments. When the oxygen ion results were compared to those with argon ions, it was found that the ratio of the two etch yields was a function of the fluorine atom to ion flux ratio.

Original language	English (US)
Pages (from-to)	1901-1906
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	5
DOIs	https://doi.org/10.1116/1.1501578
State	Published - Sep 2002
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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@article{cdf91cd453f34a568baf1999d98c0eeb,

title = "Argon and oxygen ion chemistry effects in photoresist etching",

abstract = "The chemical sputtering yield of Olin 10i i-line PR was measured using an oxygen ion beam and a fluorine atom beam over a range of fluorine atom to oxygen ion flux ratios. As such, the etch yield was found to be consistently higher than that previously measured for samples bombarded with argon ions and fluorine atoms. The data were fit using a modified form of the phenomenological model developed to describe the previous argon etch yield experiments. When the oxygen ion results were compared to those with argon ions, it was found that the ratio of the two etch yields was a function of the fluorine atom to ion flux ratio.",

author = "Frank Greer and L. Van and D. Fraser and Coburn, {J. W.} and Graves, {David B.}",

year = "2002",

month = sep,

doi = "10.1116/1.1501578",

language = "English (US)",

volume = "20",

pages = "1901--1906",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Argon and oxygen ion chemistry effects in photoresist etching

AU - Greer, Frank

AU - Van, L.

AU - Fraser, D.

AU - Coburn, J. W.

AU - Graves, David B.

PY - 2002/9

Y1 - 2002/9

N2 - The chemical sputtering yield of Olin 10i i-line PR was measured using an oxygen ion beam and a fluorine atom beam over a range of fluorine atom to oxygen ion flux ratios. As such, the etch yield was found to be consistently higher than that previously measured for samples bombarded with argon ions and fluorine atoms. The data were fit using a modified form of the phenomenological model developed to describe the previous argon etch yield experiments. When the oxygen ion results were compared to those with argon ions, it was found that the ratio of the two etch yields was a function of the fluorine atom to ion flux ratio.

AB - The chemical sputtering yield of Olin 10i i-line PR was measured using an oxygen ion beam and a fluorine atom beam over a range of fluorine atom to oxygen ion flux ratios. As such, the etch yield was found to be consistently higher than that previously measured for samples bombarded with argon ions and fluorine atoms. The data were fit using a modified form of the phenomenological model developed to describe the previous argon etch yield experiments. When the oxygen ion results were compared to those with argon ions, it was found that the ratio of the two etch yields was a function of the fluorine atom to ion flux ratio.

UR - http://www.scopus.com/inward/record.url?scp=0036026353&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036026353&partnerID=8YFLogxK

U2 - 10.1116/1.1501578

DO - 10.1116/1.1501578

M3 - Article

AN - SCOPUS:0036026353

SN - 1071-1023

VL - 20

SP - 1901

EP - 1906

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

ER -

Argon and oxygen ion chemistry effects in photoresist etching

Abstract

All Science Journal Classification (ASJC) codes

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