Argon and oxygen ion chemistry effects in photoresist etching

Frank Greer, L. Van, D. Fraser, J. W. Coburn, David B. Graves

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

The chemical sputtering yield of Olin 10i i-line PR was measured using an oxygen ion beam and a fluorine atom beam over a range of fluorine atom to oxygen ion flux ratios. As such, the etch yield was found to be consistently higher than that previously measured for samples bombarded with argon ions and fluorine atoms. The data were fit using a modified form of the phenomenological model developed to describe the previous argon etch yield experiments. When the oxygen ion results were compared to those with argon ions, it was found that the ratio of the two etch yields was a function of the fluorine atom to ion flux ratio.

Original languageEnglish (US)
Pages (from-to)1901-1906
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number5
DOIs
StatePublished - Sep 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Argon and oxygen ion chemistry effects in photoresist etching'. Together they form a unique fingerprint.

Cite this