Ar+ bombardment of 193 nm photoresist: Morphological effects

E. Pargon; D. Nest; D. B. Graves

doi:10.1116/1.2747630

Ar+ bombardment of 193 nm photoresist: Morphological effects

E. Pargon, D. Nest, D. B. Graves

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We present results from an experimental study of Ar+ beam exposure on 193 nm methacrylate-based photoresist at 500, 1000, and 2000 eV and a range of angles of incidence from normal incidence to 80°, from normal. The initial sputtering yield decreases with ion fluence until reaching a steady value at all energies and angles. The sputtering yield peaks near 80° at steady state for all energies. Atomic force microscope measurements after ion beam exposure reveal that photoresist surface texture remains smooth for angles of incidence from normal to about 40°. Various surface roughening features emerge at higher angles of incidence for fluences above about 1015 ions cm-2. Surface roughening is observed for selected ranges of impact angles and fluences. Distinct holes are observed for some conditions. Longitudinal ripples, resembling striations, are observed for ion angles of incidence above about 70°, and may be related to sidewall striations observed in plasma etching of holes and trenches.

Original language	English (US)
Pages (from-to)	1236-1243
Number of pages	8
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	25
Issue number	4
DOIs	https://doi.org/10.1116/1.2747630
State	Published - 2007
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.2747630

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title = "Ar+ bombardment of 193 nm photoresist: Morphological effects",

abstract = "We present results from an experimental study of Ar+ beam exposure on 193 nm methacrylate-based photoresist at 500, 1000, and 2000 eV and a range of angles of incidence from normal incidence to 80°, from normal. The initial sputtering yield decreases with ion fluence until reaching a steady value at all energies and angles. The sputtering yield peaks near 80° at steady state for all energies. Atomic force microscope measurements after ion beam exposure reveal that photoresist surface texture remains smooth for angles of incidence from normal to about 40°. Various surface roughening features emerge at higher angles of incidence for fluences above about 1015 ions cm-2. Surface roughening is observed for selected ranges of impact angles and fluences. Distinct holes are observed for some conditions. Longitudinal ripples, resembling striations, are observed for ion angles of incidence above about 70°, and may be related to sidewall striations observed in plasma etching of holes and trenches.",

author = "E. Pargon and D. Nest and Graves, {D. B.}",

note = "Funding Information: The authors gratefully acknowledge discussions with Mark Doczy of Intel, and David Fraser, Harold Winters, John Coburn, Mike Lieberman, and Rachel Segalman of UC Berkeley. In addition, this project benefited from discussions and interactions with S. Engelmann, R. Bruce, B. Smith, T. Kwon, R. Phaneuf, and G. S. Oehrlein of the University of Maryland; Y. C. Bae and C. Andes of Rohm and Haas; E. A. Hudson of Lam Research Corporation; and P. Lazzeri, E. Iacob, and M. Anderle of ITC-Irst. The authors also acknowledge the expert technical assistance from the Lam Research demo lab in the measurement of the high-resolution SEM images. This work was supported, in part, by the National Science Foundation under award No. DMR-0406120.",

year = "2007",

doi = "10.1116/1.2747630",

language = "English (US)",

volume = "25",

pages = "1236--1243",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "American Institute of Physics",

number = "4",

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T1 - Ar+ bombardment of 193 nm photoresist

T2 - Morphological effects

AU - Pargon, E.

AU - Nest, D.

AU - Graves, D. B.

N1 - Funding Information: The authors gratefully acknowledge discussions with Mark Doczy of Intel, and David Fraser, Harold Winters, John Coburn, Mike Lieberman, and Rachel Segalman of UC Berkeley. In addition, this project benefited from discussions and interactions with S. Engelmann, R. Bruce, B. Smith, T. Kwon, R. Phaneuf, and G. S. Oehrlein of the University of Maryland; Y. C. Bae and C. Andes of Rohm and Haas; E. A. Hudson of Lam Research Corporation; and P. Lazzeri, E. Iacob, and M. Anderle of ITC-Irst. The authors also acknowledge the expert technical assistance from the Lam Research demo lab in the measurement of the high-resolution SEM images. This work was supported, in part, by the National Science Foundation under award No. DMR-0406120.

PY - 2007

Y1 - 2007

N2 - We present results from an experimental study of Ar+ beam exposure on 193 nm methacrylate-based photoresist at 500, 1000, and 2000 eV and a range of angles of incidence from normal incidence to 80°, from normal. The initial sputtering yield decreases with ion fluence until reaching a steady value at all energies and angles. The sputtering yield peaks near 80° at steady state for all energies. Atomic force microscope measurements after ion beam exposure reveal that photoresist surface texture remains smooth for angles of incidence from normal to about 40°. Various surface roughening features emerge at higher angles of incidence for fluences above about 1015 ions cm-2. Surface roughening is observed for selected ranges of impact angles and fluences. Distinct holes are observed for some conditions. Longitudinal ripples, resembling striations, are observed for ion angles of incidence above about 70°, and may be related to sidewall striations observed in plasma etching of holes and trenches.

AB - We present results from an experimental study of Ar+ beam exposure on 193 nm methacrylate-based photoresist at 500, 1000, and 2000 eV and a range of angles of incidence from normal incidence to 80°, from normal. The initial sputtering yield decreases with ion fluence until reaching a steady value at all energies and angles. The sputtering yield peaks near 80° at steady state for all energies. Atomic force microscope measurements after ion beam exposure reveal that photoresist surface texture remains smooth for angles of incidence from normal to about 40°. Various surface roughening features emerge at higher angles of incidence for fluences above about 1015 ions cm-2. Surface roughening is observed for selected ranges of impact angles and fluences. Distinct holes are observed for some conditions. Longitudinal ripples, resembling striations, are observed for ion angles of incidence above about 70°, and may be related to sidewall striations observed in plasma etching of holes and trenches.

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Ar+ bombardment of 193 nm photoresist: Morphological effects

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