Ar+ bombardment of 193 nm photoresist: Morphological effects

E. Pargon, D. Nest, D. B. Graves

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


We present results from an experimental study of Ar+ beam exposure on 193 nm methacrylate-based photoresist at 500, 1000, and 2000 eV and a range of angles of incidence from normal incidence to 80°, from normal. The initial sputtering yield decreases with ion fluence until reaching a steady value at all energies and angles. The sputtering yield peaks near 80° at steady state for all energies. Atomic force microscope measurements after ion beam exposure reveal that photoresist surface texture remains smooth for angles of incidence from normal to about 40°. Various surface roughening features emerge at higher angles of incidence for fluences above about 1015 ions cm-2. Surface roughening is observed for selected ranges of impact angles and fluences. Distinct holes are observed for some conditions. Longitudinal ripples, resembling striations, are observed for ion angles of incidence above about 70°, and may be related to sidewall striations observed in plasma etching of holes and trenches.

Original languageEnglish (US)
Pages (from-to)1236-1243
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number4
StatePublished - 2007
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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