Approaching the Mott-Hubbard insulator in the 85-K superconductor Bi2(Sr,Ca)3Cu2O8+d by doping with Tm

J. Clayhold; S. J. Hagen; N. P. Ong; J. M. Tarascon; P. Barboux

doi:10.1103/PhysRevB.39.7320

Approaching the Mott-Hubbard insulator in the 85-K superconductor Bi2(Sr,Ca)3Cu2O8+d by doping with Tm

J. Clayhold
, S. J. Hagen
, N. P. Ong
, J. M. Tarascon
, P. Barboux

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

As x increases in Bi4Sr3Ca3-xTmxCu4O16+y the Hall carrier density nH decreases linearly. The variation is consistent with Mott-Hubbard behavior, but in conflict with band-structure results which ignore correlations. We find that the variation of Tc vs nH is nonmonotonic. The source of the large carrier population (0.4/Cu) in the undoped (x=0) compound is discussed.

Original language	English (US)
Pages (from-to)	7320-7323
Number of pages	4
Journal	Physical Review B
Volume	39
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.39.7320
State	Published - 1989

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

Access to Document

10.1103/PhysRevB.39.7320

Cite this

@article{309fff20c2b340f0b5dc5f681ea18e6c,

title = "Approaching the Mott-Hubbard insulator in the 85-K superconductor Bi2(Sr,Ca)3Cu2O8+d by doping with Tm",

abstract = "As x increases in Bi4Sr3Ca3-xTmxCu4O16+y the Hall carrier density nH decreases linearly. The variation is consistent with Mott-Hubbard behavior, but in conflict with band-structure results which ignore correlations. We find that the variation of Tc vs nH is nonmonotonic. The source of the large carrier population (0.4/Cu) in the undoped (x=0) compound is discussed.",

author = "J. Clayhold and Hagen, \{S. J.\} and Ong, \{N. P.\} and Tarascon, \{J. M.\} and P. Barboux",

year = "1989",

doi = "10.1103/PhysRevB.39.7320",

language = "English (US)",

volume = "39",

pages = "7320--7323",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Physical Society",

number = "10",

}

TY - JOUR

T1 - Approaching the Mott-Hubbard insulator in the 85-K superconductor Bi2(Sr,Ca)3Cu2O8+d by doping with Tm

AU - Clayhold, J.

AU - Hagen, S. J.

AU - Ong, N. P.

AU - Tarascon, J. M.

AU - Barboux, P.

PY - 1989

Y1 - 1989

N2 - As x increases in Bi4Sr3Ca3-xTmxCu4O16+y the Hall carrier density nH decreases linearly. The variation is consistent with Mott-Hubbard behavior, but in conflict with band-structure results which ignore correlations. We find that the variation of Tc vs nH is nonmonotonic. The source of the large carrier population (0.4/Cu) in the undoped (x=0) compound is discussed.

AB - As x increases in Bi4Sr3Ca3-xTmxCu4O16+y the Hall carrier density nH decreases linearly. The variation is consistent with Mott-Hubbard behavior, but in conflict with band-structure results which ignore correlations. We find that the variation of Tc vs nH is nonmonotonic. The source of the large carrier population (0.4/Cu) in the undoped (x=0) compound is discussed.

UR - https://www.scopus.com/pages/publications/0039568550

UR - https://www.scopus.com/pages/publications/0039568550#tab=citedBy

U2 - 10.1103/PhysRevB.39.7320

DO - 10.1103/PhysRevB.39.7320

M3 - Article

AN - SCOPUS:0039568550

SN - 0163-1829

VL - 39

SP - 7320

EP - 7323

JO - Physical Review B

JF - Physical Review B

IS - 10

ER -

Approaching the Mott-Hubbard insulator in the 85-K superconductor Bi2(Sr,Ca)3Cu2O8+d by doping with Tm

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this