Approaching the Mott-Hubbard insulator in the 85-K superconductor Bi2(Sr,Ca)3Cu2O8+d by doping with Tm

J. Clayhold; S. J. Hagen; N. P. Ong; J. M. Tarascon; P. Barboux

doi:10.1103/PhysRevB.39.7320

Approaching the Mott-Hubbard insulator in the 85-K superconductor Bi2(Sr,Ca)3Cu2O8+d by doping with Tm

J. Clayhold, S. J. Hagen, N. P. Ong, J. M. Tarascon, P. Barboux

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40 Scopus citations

Abstract

As x increases in Bi4Sr3Ca3-xTmxCu4O16+y the Hall carrier density nH decreases linearly. The variation is consistent with Mott-Hubbard behavior, but in conflict with band-structure results which ignore correlations. We find that the variation of Tc vs nH is nonmonotonic. The source of the large carrier population (0.4/Cu) in the undoped (x=0) compound is discussed.

Original language	English (US)
Pages (from-to)	7320-7323
Number of pages	4
Journal	Physical Review B
Volume	39
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.39.7320
State	Published - 1989

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1103/PhysRevB.39.7320

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title = "Approaching the Mott-Hubbard insulator in the 85-K superconductor Bi2(Sr,Ca)3Cu2O8+d by doping with Tm",

abstract = "As x increases in Bi4Sr3Ca3-xTmxCu4O16+y the Hall carrier density nH decreases linearly. The variation is consistent with Mott-Hubbard behavior, but in conflict with band-structure results which ignore correlations. We find that the variation of Tc vs nH is nonmonotonic. The source of the large carrier population (0.4/Cu) in the undoped (x=0) compound is discussed.",

author = "J. Clayhold and Hagen, {S. J.} and Ong, {N. P.} and Tarascon, {J. M.} and P. Barboux",

year = "1989",

doi = "10.1103/PhysRevB.39.7320",

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AU - Clayhold, J.

AU - Hagen, S. J.

AU - Ong, N. P.

AU - Tarascon, J. M.

AU - Barboux, P.

PY - 1989

Y1 - 1989

N2 - As x increases in Bi4Sr3Ca3-xTmxCu4O16+y the Hall carrier density nH decreases linearly. The variation is consistent with Mott-Hubbard behavior, but in conflict with band-structure results which ignore correlations. We find that the variation of Tc vs nH is nonmonotonic. The source of the large carrier population (0.4/Cu) in the undoped (x=0) compound is discussed.

AB - As x increases in Bi4Sr3Ca3-xTmxCu4O16+y the Hall carrier density nH decreases linearly. The variation is consistent with Mott-Hubbard behavior, but in conflict with band-structure results which ignore correlations. We find that the variation of Tc vs nH is nonmonotonic. The source of the large carrier population (0.4/Cu) in the undoped (x=0) compound is discussed.

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Approaching the Mott-Hubbard insulator in the 85-K superconductor Bi2(Sr,Ca)3Cu2O8+d by doping with Tm

Abstract

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