Approaching the Mott-Hubbard insulator in the 85-K superconductor Bi2(Sr,Ca)3Cu2O8+d by doping with Tm

J. Clayhold, S. J. Hagen, Nai Phuan Ong, J. M. Tarascon, P. Barboux

Research output: Contribution to journalArticle

40 Scopus citations

Abstract

As x increases in Bi4Sr3Ca3-xTmxCu4O16+y the Hall carrier density nH decreases linearly. The variation is consistent with Mott-Hubbard behavior, but in conflict with band-structure results which ignore correlations. We find that the variation of Tc vs nH is nonmonotonic. The source of the large carrier population (0.4/Cu) in the undoped (x=0) compound is discussed.

Original languageEnglish (US)
Pages (from-to)7320-7323
Number of pages4
JournalPhysical Review B
Volume39
Issue number10
DOIs
StatePublished - Jan 1 1989

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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