APPROACH TO STRUCTURE DETERMINATION OF COMPOUND SEMICONDUCTOR SURFACES BY KINEMATICAL LEED CALCULATIONS: GaAs(110) AND ZnSe(110).

P. Mark, G. Cisneros, M. Bonn, Antoine Kahn, C. B. Duke, A. Paton, A. R. Lubinsky

Research output: Contribution to conferencePaperpeer-review

41 Scopus citations

Abstract

Because of the expense of dynamical low-energy electron diffraction (LEED) computational analyses, a more economical approach to the comparison between measured and computed LEED intensity profiles of nonpolar compound semiconductor surfaces consists of determining an initial estimate of surface atomic position coordinates via comparison of experimental data with kinematical calculations. Once an acceptable region of position parameter space has been identified, further refinements can be obtained by dynamical LEED analyses. Results are presented of the kinematical portion of such an analysis applied to GaAs(110) and ZnSe(110) surfaces. It is found that both materials exhibit similar surface atomic rearrangements characterized by bond length distortions and vertical displacements of the two sublattices in the uppermost atomic layer.

Original languageEnglish (US)
Pages910-916
Number of pages7
DOIs
StatePublished - Jan 1 1977
EventProc of the Annu Conf on the Phys of Compd Semicond, 4th - Princeton, NJ, USA
Duration: Feb 8 1977Feb 10 1977

Other

OtherProc of the Annu Conf on the Phys of Compd Semicond, 4th
CityPrinceton, NJ, USA
Period2/8/772/10/77

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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