APPROACH TO STRUCTURE DETERMINATION OF COMPOUND SEMICONDUCTOR SURFACES BY KINEMATICAL LEED CALCULATIONS: GaAs(110) AND ZnSe(110).

P. Mark; G. Cisneros; M. Bonn; Antoine Kahn; C. B. Duke; A. Paton; A. R. Lubinsky

doi:10.1116/1.569327

APPROACH TO STRUCTURE DETERMINATION OF COMPOUND SEMICONDUCTOR SURFACES BY KINEMATICAL LEED CALCULATIONS: GaAs(110) AND ZnSe(110).

P. Mark, G. Cisneros, M. Bonn, Antoine Kahn, C. B. Duke, A. Paton, A. R. Lubinsky

Research output: Contribution to conference › Paper › peer-review

41 Scopus citations

Abstract

Because of the expense of dynamical low-energy electron diffraction (LEED) computational analyses, a more economical approach to the comparison between measured and computed LEED intensity profiles of nonpolar compound semiconductor surfaces consists of determining an initial estimate of surface atomic position coordinates via comparison of experimental data with kinematical calculations. Once an acceptable region of position parameter space has been identified, further refinements can be obtained by dynamical LEED analyses. Results are presented of the kinematical portion of such an analysis applied to GaAs(110) and ZnSe(110) surfaces. It is found that both materials exhibit similar surface atomic rearrangements characterized by bond length distortions and vertical displacements of the two sublattices in the uppermost atomic layer.

Original language	English (US)
Pages	910-916
Number of pages	7
DOIs	https://doi.org/10.1116/1.569327
State	Published - 1977
Event	Proc of the Annu Conf on the Phys of Compd Semicond, 4th - Princeton, NJ, USA Duration: Feb 8 1977 → Feb 10 1977

Other

Other	Proc of the Annu Conf on the Phys of Compd Semicond, 4th
City	Princeton, NJ, USA
Period	2/8/77 → 2/10/77

All Science Journal Classification (ASJC) codes

General Engineering

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@conference{e2172c281b1842cd851823b49e527e4e,

title = "APPROACH TO STRUCTURE DETERMINATION OF COMPOUND SEMICONDUCTOR SURFACES BY KINEMATICAL LEED CALCULATIONS: GaAs(110) AND ZnSe(110).",

abstract = "Because of the expense of dynamical low-energy electron diffraction (LEED) computational analyses, a more economical approach to the comparison between measured and computed LEED intensity profiles of nonpolar compound semiconductor surfaces consists of determining an initial estimate of surface atomic position coordinates via comparison of experimental data with kinematical calculations. Once an acceptable region of position parameter space has been identified, further refinements can be obtained by dynamical LEED analyses. Results are presented of the kinematical portion of such an analysis applied to GaAs(110) and ZnSe(110) surfaces. It is found that both materials exhibit similar surface atomic rearrangements characterized by bond length distortions and vertical displacements of the two sublattices in the uppermost atomic layer.",

author = "P. Mark and G. Cisneros and M. Bonn and Antoine Kahn and Duke, {C. B.} and A. Paton and Lubinsky, {A. R.}",

year = "1977",

doi = "10.1116/1.569327",

language = "English (US)",

pages = "910--916",

note = "Proc of the Annu Conf on the Phys of Compd Semicond, 4th ; Conference date: 08-02-1977 Through 10-02-1977",

}

Mark, P, Cisneros, G, Bonn, M, Kahn, A, Duke, CB, Paton, A & Lubinsky, AR 1977, 'APPROACH TO STRUCTURE DETERMINATION OF COMPOUND SEMICONDUCTOR SURFACES BY KINEMATICAL LEED CALCULATIONS: GaAs(110) AND ZnSe(110).', Paper presented at Proc of the Annu Conf on the Phys of Compd Semicond, 4th, Princeton, NJ, USA, 2/8/77 - 2/10/77 pp. 910-916. https://doi.org/10.1116/1.569327

TY - CONF

T1 - APPROACH TO STRUCTURE DETERMINATION OF COMPOUND SEMICONDUCTOR SURFACES BY KINEMATICAL LEED CALCULATIONS

T2 - Proc of the Annu Conf on the Phys of Compd Semicond, 4th

AU - Mark, P.

AU - Cisneros, G.

AU - Bonn, M.

AU - Kahn, Antoine

AU - Duke, C. B.

AU - Paton, A.

AU - Lubinsky, A. R.

PY - 1977

Y1 - 1977

N2 - Because of the expense of dynamical low-energy electron diffraction (LEED) computational analyses, a more economical approach to the comparison between measured and computed LEED intensity profiles of nonpolar compound semiconductor surfaces consists of determining an initial estimate of surface atomic position coordinates via comparison of experimental data with kinematical calculations. Once an acceptable region of position parameter space has been identified, further refinements can be obtained by dynamical LEED analyses. Results are presented of the kinematical portion of such an analysis applied to GaAs(110) and ZnSe(110) surfaces. It is found that both materials exhibit similar surface atomic rearrangements characterized by bond length distortions and vertical displacements of the two sublattices in the uppermost atomic layer.

AB - Because of the expense of dynamical low-energy electron diffraction (LEED) computational analyses, a more economical approach to the comparison between measured and computed LEED intensity profiles of nonpolar compound semiconductor surfaces consists of determining an initial estimate of surface atomic position coordinates via comparison of experimental data with kinematical calculations. Once an acceptable region of position parameter space has been identified, further refinements can be obtained by dynamical LEED analyses. Results are presented of the kinematical portion of such an analysis applied to GaAs(110) and ZnSe(110) surfaces. It is found that both materials exhibit similar surface atomic rearrangements characterized by bond length distortions and vertical displacements of the two sublattices in the uppermost atomic layer.

UR - http://www.scopus.com/inward/record.url?scp=0017517363&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0017517363&partnerID=8YFLogxK

U2 - 10.1116/1.569327

DO - 10.1116/1.569327

M3 - Paper

AN - SCOPUS:0017517363

SP - 910

EP - 916

Y2 - 8 February 1977 through 10 February 1977

ER -

APPROACH TO STRUCTURE DETERMINATION OF COMPOUND SEMICONDUCTOR SURFACES BY KINEMATICAL LEED CALCULATIONS: GaAs(110) AND ZnSe(110).

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