APPLICATION OF THE SHUBNIKOV-DE HAAS EFFECT IN CHARACTERIZATION OF SUB-100-NM CHANNEL Si MOSFETS.

S. Y. Chou, D. A. Antoniadis, Henry I. Smith

Research output: Contribution to journalConference article

Abstract

A novel use of the Shubnikov-de Haas effect (SdH) in the characterization of channel length and gate capacitance of sub-100-nm-channel Si MOSFETs is demonstrated. The SdH is used to measure the length of the 'flat' part of the surface electrical potential along the channel, and also to measure gate capacitance directly. The characterization methods do not require knowledge of any device parameters; one needs to know only the magnetic field, the number of oscillation peaks (for channel length characterization) and the SdH oscillation period (for gate capacitance measurement). Both characterization methods can be generalized to FETs fabricated in materials other than Si.

Original languageEnglish (US)
Pages (from-to)562-564
Number of pages3
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 1985
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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