APPLICATION OF THE SHUBNIKOV-DE HAAS EFFECT IN CHARACTERIZATION OF SUB-100-NM CHANNEL Si MOSFETS.

S. Y. Chou; D. A. Antoniadis; Henry I. Smith

doi:10.1109/iedm.1985.191033

APPLICATION OF THE SHUBNIKOV-DE HAAS EFFECT IN CHARACTERIZATION OF SUB-100-NM CHANNEL Si MOSFETS.

S. Y. Chou, D. A. Antoniadis, Henry I. Smith

Research output: Contribution to journal › Conference article › peer-review

Abstract

A novel use of the Shubnikov-de Haas effect (SdH) in the characterization of channel length and gate capacitance of sub-100-nm-channel Si MOSFETs is demonstrated. The SdH is used to measure the length of the 'flat' part of the surface electrical potential along the channel, and also to measure gate capacitance directly. The characterization methods do not require knowledge of any device parameters; one needs to know only the magnetic field, the number of oscillation peaks (for channel length characterization) and the SdH oscillation period (for gate capacitance measurement). Both characterization methods can be generalized to FETs fabricated in materials other than Si.

Original language	English (US)
Pages (from-to)	562-564
Number of pages	3
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/iedm.1985.191033
State	Published - 1985
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/iedm.1985.191033

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@article{a9290e1d820a4e0daeb4e65f0ae1f7ac,

title = "APPLICATION OF THE SHUBNIKOV-DE HAAS EFFECT IN CHARACTERIZATION OF SUB-100-NM CHANNEL Si MOSFETS.",

abstract = "A novel use of the Shubnikov-de Haas effect (SdH) in the characterization of channel length and gate capacitance of sub-100-nm-channel Si MOSFETs is demonstrated. The SdH is used to measure the length of the 'flat' part of the surface electrical potential along the channel, and also to measure gate capacitance directly. The characterization methods do not require knowledge of any device parameters; one needs to know only the magnetic field, the number of oscillation peaks (for channel length characterization) and the SdH oscillation period (for gate capacitance measurement). Both characterization methods can be generalized to FETs fabricated in materials other than Si.",

author = "Chou, {S. Y.} and Antoniadis, {D. A.} and Smith, {Henry I.}",

year = "1985",

doi = "10.1109/iedm.1985.191033",

language = "English (US)",

pages = "562--564",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - APPLICATION OF THE SHUBNIKOV-DE HAAS EFFECT IN CHARACTERIZATION OF SUB-100-NM CHANNEL Si MOSFETS.

AU - Chou, S. Y.

AU - Antoniadis, D. A.

AU - Smith, Henry I.

PY - 1985

Y1 - 1985

N2 - A novel use of the Shubnikov-de Haas effect (SdH) in the characterization of channel length and gate capacitance of sub-100-nm-channel Si MOSFETs is demonstrated. The SdH is used to measure the length of the 'flat' part of the surface electrical potential along the channel, and also to measure gate capacitance directly. The characterization methods do not require knowledge of any device parameters; one needs to know only the magnetic field, the number of oscillation peaks (for channel length characterization) and the SdH oscillation period (for gate capacitance measurement). Both characterization methods can be generalized to FETs fabricated in materials other than Si.

AB - A novel use of the Shubnikov-de Haas effect (SdH) in the characterization of channel length and gate capacitance of sub-100-nm-channel Si MOSFETs is demonstrated. The SdH is used to measure the length of the 'flat' part of the surface electrical potential along the channel, and also to measure gate capacitance directly. The characterization methods do not require knowledge of any device parameters; one needs to know only the magnetic field, the number of oscillation peaks (for channel length characterization) and the SdH oscillation period (for gate capacitance measurement). Both characterization methods can be generalized to FETs fabricated in materials other than Si.

UR - http://www.scopus.com/inward/record.url?scp=0022306529&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022306529&partnerID=8YFLogxK

U2 - 10.1109/iedm.1985.191033

DO - 10.1109/iedm.1985.191033

M3 - Conference article

AN - SCOPUS:0022306529

SN - 0163-1918

SP - 562

EP - 564

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

ER -

APPLICATION OF THE SHUBNIKOV-DE HAAS EFFECT IN CHARACTERIZATION OF SUB-100-NM CHANNEL Si MOSFETS.

Abstract

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