Antimonides with the half-Heusler structure: New thermoelectric materials

K. Mastronardi; D. Young; C. C. Wang; P. Khalifah; R. J. Cava; A. P. Ramirez

doi:10.1063/1.123596

Antimonides with the half-Heusler structure: New thermoelectric materials

K. Mastronardi, D. Young, C. C. Wang, P. Khalifah, R. J. Cava, A. P. Ramirez

Research output: Contribution to journal › Article › peer-review

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Abstract

The thermoelectric properties near ambient temperature of half-Heusler alloys based on LnPdSb, where Ln=Ho, Er, and Dy are reported. The Seebeck coefficients are large, between 60 and 250 μV/K, and the materials are p type. The resistivities are between 0.6 and 20 mΩcm. Thermal conductivities are between approximately 5.0 and 3.5 W/mK at 300 K, and are smallest in intentionally disordered materials. The highest ambient temperature ZT obtained is 0.06. Band-structure calculations are presented for LuPdSb. It is suggested that half-Heusler alloys with 18 electrons per formula unit may represent a large class of thermoelectric materials.

Original language	English (US)
Pages (from-to)	1415-1417
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	10
DOIs	https://doi.org/10.1063/1.123596
State	Published - Mar 8 1999

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.123596

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abstract = "The thermoelectric properties near ambient temperature of half-Heusler alloys based on LnPdSb, where Ln=Ho, Er, and Dy are reported. The Seebeck coefficients are large, between 60 and 250 μV/K, and the materials are p type. The resistivities are between 0.6 and 20 mΩcm. Thermal conductivities are between approximately 5.0 and 3.5 W/mK at 300 K, and are smallest in intentionally disordered materials. The highest ambient temperature ZT obtained is 0.06. Band-structure calculations are presented for LuPdSb. It is suggested that half-Heusler alloys with 18 electrons per formula unit may represent a large class of thermoelectric materials.",

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T1 - Antimonides with the half-Heusler structure

T2 - New thermoelectric materials

AU - Mastronardi, K.

AU - Young, D.

AU - Wang, C. C.

AU - Khalifah, P.

AU - Cava, R. J.

AU - Ramirez, A. P.

PY - 1999/3/8

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N2 - The thermoelectric properties near ambient temperature of half-Heusler alloys based on LnPdSb, where Ln=Ho, Er, and Dy are reported. The Seebeck coefficients are large, between 60 and 250 μV/K, and the materials are p type. The resistivities are between 0.6 and 20 mΩcm. Thermal conductivities are between approximately 5.0 and 3.5 W/mK at 300 K, and are smallest in intentionally disordered materials. The highest ambient temperature ZT obtained is 0.06. Band-structure calculations are presented for LuPdSb. It is suggested that half-Heusler alloys with 18 electrons per formula unit may represent a large class of thermoelectric materials.

AB - The thermoelectric properties near ambient temperature of half-Heusler alloys based on LnPdSb, where Ln=Ho, Er, and Dy are reported. The Seebeck coefficients are large, between 60 and 250 μV/K, and the materials are p type. The resistivities are between 0.6 and 20 mΩcm. Thermal conductivities are between approximately 5.0 and 3.5 W/mK at 300 K, and are smallest in intentionally disordered materials. The highest ambient temperature ZT obtained is 0.06. Band-structure calculations are presented for LuPdSb. It is suggested that half-Heusler alloys with 18 electrons per formula unit may represent a large class of thermoelectric materials.

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Antimonides with the half-Heusler structure: New thermoelectric materials

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