Antilevitation of Landau levels in vanishing magnetic fields

W. Pan, K. W. Baldwin, K. W. West, L. N. Pfeiffer, D. C. Tsui

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We report in this Rapid Communication an antilevitation behavior of Landau levels in vanishing magnetic fields in a high quality heterojunction insulated-gated field-effect transistor. We found, in the Landau fan diagram of electron density versus magnetic field, the positions of the magnetoresistance minima at Landau-level fillings ν=4-6 move below the "traditional" Landau-level line to lower electron densities. Moreover, the even and odd filling factors show quantitatively different behaviors in antilevitation, suggesting that the exchange interactions may be important.

Original languageEnglish (US)
Article number161303
JournalPhysical Review B
Volume94
Issue number16
DOIs
StatePublished - Oct 17 2016

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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