Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures

A. Gamucci, D. Spirito, M. Carrega, B. Karmakar, A. Lombardo, M. Bruna, L. N. Pfeiffer, K. W. West, A. C. Ferrari, M. Polini, V. Pellegrini

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88 Scopus citations

Abstract

Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies. Here we report a new class of heterostructures comprising a single-layer (or bilayer) graphene in close proximity to a quantum well created in GaAs and supporting a high-mobility two-dimensional electron gas. In our devices, graphene is naturally hole-doped, thereby allowing for the investigation of electron-hole interactions. We focus on the Coulomb drag transport measurements, which are sensitive to many-body effects, and find that the Coulomb drag resistivity significantly increases for temperatures <5-10 K. The low-temperature data follow a logarithmic law, therefore displaying a notable departure from the ordinary quadratic temperature dependence expected in a weakly correlated Fermi-liquid. This anomalous behaviour is consistent with the onset of strong interlayer correlations. Our heterostructures represent a new platform for the creation of coherent circuits and topologically protected quantum bits.

Original languageEnglish (US)
Article number5824
JournalNature communications
Volume5
DOIs
StatePublished - Dec 19 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Biochemistry, Genetics and Molecular Biology
  • General Physics and Astronomy

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