Anomalous Hall effect below the magnetic-field-induced metal-insulator transition in narrow-gap semiconductors

V. J. Goldman, M. Shayegan, H. D. Drew

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

A model is presented in which a semiconductor crystal contains an infinite metallic donor cluster as well as shallow donors which do not have close neighbors thus supporting effectively localized electronic states. The average carrier concentration in the infinite cluster is greater than the crystal-average electron concentration. The model is applied to the Hall effect below the magnetic-field-induced metal-insulator transition in Hg1-xCdxTe and InSb.

Original languageEnglish (US)
Pages (from-to)1056-1059
Number of pages4
JournalPhysical review letters
Volume57
Issue number8
DOIs
StatePublished - Jan 1 1986

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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