Abstract
A model is presented in which a semiconductor crystal contains an infinite metallic donor cluster as well as shallow donors which do not have close neighbors thus supporting effectively localized electronic states. The average carrier concentration in the infinite cluster is greater than the crystal-average electron concentration. The model is applied to the Hall effect below the magnetic-field-induced metal-insulator transition in Hg1-xCdxTe and InSb.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1056-1059 |
| Number of pages | 4 |
| Journal | Physical review letters |
| Volume | 57 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1986 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy