Anomalous enhancement of the electron dephasing rate from magnetoresistance data in Bi2Sr2CuO6

T. W. Jing, Nai Phuan Ong, T. V. Ramakrishnan, J. M. Tarascon, K. Remschnig

Research output: Contribution to journalArticle

63 Scopus citations

Abstract

The low-temperature magnetoresistance (MR) in Bi2Sr2CuO6 is highly anisotropic. By fitting the orbital MR with the weak-localization expression, we derive a carrier dephasing rate 1 that varies as T-13. This implies that the energy levels are greatly broadened at low temperatures. Both the energy scale derived from 1 vs T and the behavior of the longitudinal MR suggest a strong coupling between the holes and the Cu spins. We discuss implications of the large dephasing rate, and contrast the MR with that of conventional disordered metals.

Original languageEnglish (US)
Pages (from-to)761-764
Number of pages4
JournalPhysical Review Letters
Volume67
Issue number6
DOIs
StatePublished - Jan 1 1991

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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