Anomalous enhancement of the electron dephasing rate from magnetoresistance data in Bi2Sr2CuO6

T. W. Jing; N. P. Ong; T. V. Ramakrishnan; J. M. Tarascon; K. Remschnig

doi:10.1103/PhysRevLett.67.761

Anomalous enhancement of the electron dephasing rate from magnetoresistance data in Bi2Sr2CuO6

T. W. Jing, N. P. Ong, T. V. Ramakrishnan, J. M. Tarascon, K. Remschnig

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Abstract

The low-temperature magnetoresistance (MR) in Bi2Sr2CuO6 is highly anisotropic. By fitting the orbital MR with the weak-localization expression, we derive a carrier dephasing rate 1 that varies as T-13. This implies that the energy levels are greatly broadened at low temperatures. Both the energy scale derived from 1 vs T and the behavior of the longitudinal MR suggest a strong coupling between the holes and the Cu spins. We discuss implications of the large dephasing rate, and contrast the MR with that of conventional disordered metals.

Original language	English (US)
Pages (from-to)	761-764
Number of pages	4
Journal	Physical review letters
Volume	67
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevLett.67.761
State	Published - 1991

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.67.761

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title = "Anomalous enhancement of the electron dephasing rate from magnetoresistance data in Bi2Sr2CuO6",

abstract = "The low-temperature magnetoresistance (MR) in Bi2Sr2CuO6 is highly anisotropic. By fitting the orbital MR with the weak-localization expression, we derive a carrier dephasing rate 1 that varies as T-13. This implies that the energy levels are greatly broadened at low temperatures. Both the energy scale derived from 1 vs T and the behavior of the longitudinal MR suggest a strong coupling between the holes and the Cu spins. We discuss implications of the large dephasing rate, and contrast the MR with that of conventional disordered metals.",

author = "Jing, {T. W.} and Ong, {N. P.} and Ramakrishnan, {T. V.} and Tarascon, {J. M.} and K. Remschnig",

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T1 - Anomalous enhancement of the electron dephasing rate from magnetoresistance data in Bi2Sr2CuO6

AU - Jing, T. W.

AU - Ong, N. P.

AU - Ramakrishnan, T. V.

AU - Tarascon, J. M.

AU - Remschnig, K.

PY - 1991

Y1 - 1991

N2 - The low-temperature magnetoresistance (MR) in Bi2Sr2CuO6 is highly anisotropic. By fitting the orbital MR with the weak-localization expression, we derive a carrier dephasing rate 1 that varies as T-13. This implies that the energy levels are greatly broadened at low temperatures. Both the energy scale derived from 1 vs T and the behavior of the longitudinal MR suggest a strong coupling between the holes and the Cu spins. We discuss implications of the large dephasing rate, and contrast the MR with that of conventional disordered metals.

AB - The low-temperature magnetoresistance (MR) in Bi2Sr2CuO6 is highly anisotropic. By fitting the orbital MR with the weak-localization expression, we derive a carrier dephasing rate 1 that varies as T-13. This implies that the energy levels are greatly broadened at low temperatures. Both the energy scale derived from 1 vs T and the behavior of the longitudinal MR suggest a strong coupling between the holes and the Cu spins. We discuss implications of the large dephasing rate, and contrast the MR with that of conventional disordered metals.

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JO - Physical review letters

JF - Physical review letters

IS - 6

ER -

Anomalous enhancement of the electron dephasing rate from magnetoresistance data in Bi2Sr2CuO6

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