Anomalous corrections to the Hall resistivity of spin-polarized holes in a two-dimensional GaAs/ Alx Ga1-x As heterostructure

Hwayong Noh, S. Lee, S. H. Chun, Hyoung Chan Kim, L. N. Pfeiffer, K. W. West

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Hall effect of two-dimensional holes that are spin-polarized by a strong parallel magnetic field was explored with a small tilt angle. The Hall resistivity increases nonlinearly with the magnetic field and exhibits negative corrections. The anomalous negative corrections increase with the perpendicular magnetization of the two-dimensional hole system. We attribute this to the anomalous Hall effect of spin-polarized carriers in a nonmagnetic system. The anomalous corrections to the conductivity exhibit nonmonotonic dependence on the magnetic field.

Original languageEnglish (US)
Article number121307
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume80
Issue number12
DOIs
StatePublished - Sep 22 2009
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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