Anisotropic transport of two-dimensional holes in high Landau levels

M. Shayegan; H. C. Manoharan; S. J. Papadakis; E. P.De Poortere

doi:10.1016/S1386-9477(99)00056-9

Anisotropic transport of two-dimensional holes in high Landau levels

M. Shayegan, H. C. Manoharan, S. J. Papadakis, E. P.De Poortere

Research output: Contribution to journal › Conference article › peer-review

50 Scopus citations

Abstract

Qualitatively similar anomalies in a high-mobility GaAs/AlGaAs 2D hole system (2DHS) are presented. Magnetoresistance data taken along [233] and [011] directions in a GaAs/AlGaAs 2D hole sample with van der Pauw geometry exhibit significant anisotropy at half-integer filling factors. The anisotropy depend on both the density and symmetry of the hole charge distribution.

Original language	English (US)
Pages (from-to)	40-42
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	6
Issue number	1
DOIs	https://doi.org/10.1016/S1386-9477(99)00056-9
State	Published - Feb 2000
Event	13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) - Ottawa, Ont, Can Duration: Aug 1 1999 → Aug 6 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/S1386-9477(99)00056-9

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title = "Anisotropic transport of two-dimensional holes in high Landau levels",

abstract = "Qualitatively similar anomalies in a high-mobility GaAs/AlGaAs 2D hole system (2DHS) are presented. Magnetoresistance data taken along [233] and [011] directions in a GaAs/AlGaAs 2D hole sample with van der Pauw geometry exhibit significant anisotropy at half-integer filling factors. The anisotropy depend on both the density and symmetry of the hole charge distribution.",

author = "M. Shayegan and Manoharan, {H. C.} and Papadakis, {S. J.} and Poortere, {E. P.De}",

note = "Funding Information: This work was supported by the National Science Foundation.; 13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) ; Conference date: 01-08-1999 Through 06-08-1999",

year = "2000",

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doi = "10.1016/S1386-9477(99)00056-9",

language = "English (US)",

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journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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T1 - Anisotropic transport of two-dimensional holes in high Landau levels

AU - Shayegan, M.

AU - Manoharan, H. C.

AU - Papadakis, S. J.

AU - Poortere, E. P.De

N1 - Funding Information: This work was supported by the National Science Foundation.

PY - 2000/2

Y1 - 2000/2

N2 - Qualitatively similar anomalies in a high-mobility GaAs/AlGaAs 2D hole system (2DHS) are presented. Magnetoresistance data taken along [233] and [011] directions in a GaAs/AlGaAs 2D hole sample with van der Pauw geometry exhibit significant anisotropy at half-integer filling factors. The anisotropy depend on both the density and symmetry of the hole charge distribution.

AB - Qualitatively similar anomalies in a high-mobility GaAs/AlGaAs 2D hole system (2DHS) are presented. Magnetoresistance data taken along [233] and [011] directions in a GaAs/AlGaAs 2D hole sample with van der Pauw geometry exhibit significant anisotropy at half-integer filling factors. The anisotropy depend on both the density and symmetry of the hole charge distribution.

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U2 - 10.1016/S1386-9477(99)00056-9

DO - 10.1016/S1386-9477(99)00056-9

M3 - Conference article

AN - SCOPUS:0034139148

SN - 1386-9477

VL - 6

SP - 40

EP - 42

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1

T2 - 13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13)

Y2 - 1 August 1999 through 6 August 1999

ER -

Anisotropic transport of two-dimensional holes in high Landau levels

Abstract

All Science Journal Classification (ASJC) codes

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