Anisotropic transport of two-dimensional holes in high Landau levels

M. Shayegan, H. C. Manoharan, S. J. Papadakis, E. P.De Poortere

Research output: Contribution to journalConference articlepeer-review

50 Scopus citations


Qualitatively similar anomalies in a high-mobility GaAs/AlGaAs 2D hole system (2DHS) are presented. Magnetoresistance data taken along [233] and [011] directions in a GaAs/AlGaAs 2D hole sample with van der Pauw geometry exhibit significant anisotropy at half-integer filling factors. The anisotropy depend on both the density and symmetry of the hole charge distribution.

Original languageEnglish (US)
Pages (from-to)40-42
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1
StatePublished - Feb 2000
Event13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) - Ottawa, Ont, Can
Duration: Aug 1 1999Aug 6 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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