Anisotropic magnetoresistance of two-dimensional holes in GaAs

S. J. Papadakis, E. P. De Poortere, M. Shayegan, R. Winkler

Research output: Contribution to journalArticlepeer-review

77 Scopus citations


An in-plane B parallel was applied to the [233] and [011] crystal axes. For each case, the magnetoresistance (MR) with I ∥ B and I ⊥ B was measured. A surprising anisotropy of the in-plane magnetoresistance and its temperature dependence was found. The results show that the rate of the upper spin-subband's depopulation with in-plane B critically depends on the relative orientation B and the crystal axes.

Original languageEnglish (US)
Pages (from-to)5592-5595
Number of pages4
JournalPhysical review letters
Issue number24
StatePublished - Jun 12 2000

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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