Anisotropic magnetic properties of the ferromagnetic semiconductor CrSbSe3

Tai Kong, Karoline Stolze, Danrui Ni, Satya K. Kushwaha, Robert J. Cava

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Abstract

Single crystals of CrSbSe3, a structurally pseudo-one-dimensional ferromagnetic semiconductor, were grown using a high-temperature solution growth technique and were characterized by x-ray diffraction, anisotropic temperature- and field-dependent magnetization, temperature-dependent resistivity, and optical absorption measurements. A band gap of 0.7 eV was determined from both resistivity and optical measurements. At high temperatures, CrSbSe3 is paramagnetic and isotropic, with a Curie-Weiss temperature of ∼145K and an effective moment of ∼4.1μB/Cr. A ferromagnetic transition occurs at Tc=71 K. The a axis, perpendicular to the chains in the structure, is the magnetic easy axis, while the chain axis direction, along b, is the hard axis. Magnetic isotherms measured around Tc do not follow the behavior predicted by simple mean-field critical exponents for a second-order phase transition. A tentative set of critical exponents is estimated based on a modified Arrott plot analysis, giving β∼0.25, γ∼1.38, and δ∼6.6.

Original languageEnglish (US)
Article number014410
JournalPhysical Review Materials
Volume2
Issue number1
DOIs
StatePublished - Jan 18 2018

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

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