Anisotropic low-temperature piezoresistance in (311) A GaAs two-dimensional holes

B. Habib, J. Shabani, E. P. De Poortere, M. Shayegan, R. Winkler

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Abstract

The authors report low-temperature resistance measurements in a modulation-doped, (311) A GaAs two-dimensional hole system as a function of applied in-plane strain. The data reveal a strong but anisotropic piezoresistance whose magnitude depends on the density as well as the direction along which the resistance is measured. At a density of 1.6× 1011 cm-2 and for a strain of about 2× 10-4 applied along the [01 1-], e.g., the resistance measured along this direction changes by nearly a factor of 2, while the resistance change in the [2- 33] direction is less than 10% and has the opposite sign. The accurate energy band calculations indicate a pronounced and anisotropic deformation of the heavy-hole dispersion with strain, qualitatively consistent with the experimental data. The extremely anisotropic magnitude of the piezoresistance, however, lacks a quantitative explanation.

Original languageEnglish (US)
Article number012107
JournalApplied Physics Letters
Volume91
Issue number1
DOIs
StatePublished - Nov 19 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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