Anisotropic Fermi contour of (001) GaAs holes in parallel magnetic fields

D. Kamburov, M. Shayegan, R. Winkler, L. N. Pfeiffer, K. W. West, K. W. Baldwin

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


We report a severe, spin-dependent, Fermi contour anisotropy induced by parallel magnetic field in a high-mobility (001) GaAs two-dimensional hole system. Employing commensurability oscillations created by a unidirectional, surface-strain-induced, periodic potential modulation, we directly probe the anisotropy of the two spin subband Fermi contours. Their areas are obtained from the Fourier transform of the Shubnikov-de Haas oscillations. Our findings are in semiquantitative agreement with the results of parameter-free calculations of the energy bands.

Original languageEnglish (US)
Article number241302
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number24
StatePublished - Dec 13 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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