We demonstrate a severe Fermi contour anisotropy induced by the application of a parallel magnetic field to high-mobility electrons confined to a 30-nm-wide (001) GaAs quantum well. We study commensurability oscillations, namely, geometrical resonances of the electron orbits with a unidirectional, surface-strain-induced, periodic potential modulation, to directly probe the size of the Fermi contours along and perpendicular to the parallel field. Their areas are obtained from the Shubnikov-de Haas oscillations. Our experimental data agree semiquantitatively with the results of parameter-free calculations of the Fermi contours, but there are significant discrepancies.
|Physical Review B - Condensed Matter and Materials Physics
|Published - Sep 30 2013
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics