Anisotropic Fermi contour of (001) GaAs electrons in parallel magnetic fields

D. Kamburov, M. A. Mueed, M. Shayegan, L. N. Pfeiffer, K. W. West, K. W. Baldwin, J. J.D. Lee, R. Winkler

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


We demonstrate a severe Fermi contour anisotropy induced by the application of a parallel magnetic field to high-mobility electrons confined to a 30-nm-wide (001) GaAs quantum well. We study commensurability oscillations, namely, geometrical resonances of the electron orbits with a unidirectional, surface-strain-induced, periodic potential modulation, to directly probe the size of the Fermi contours along and perpendicular to the parallel field. Their areas are obtained from the Shubnikov-de Haas oscillations. Our experimental data agree semiquantitatively with the results of parameter-free calculations of the Fermi contours, but there are significant discrepancies.

Original languageEnglish (US)
Article number125435
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number12
StatePublished - Sep 30 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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