Anisotropic disorder in high-mobility 2D heterostructures and its correlation to electron transport

R. L. Willett; J. W.P. Hsu; D. Natelson; K. W. West; L. N. Pfeiffer

Anisotropic disorder in high-mobility 2D heterostructures and its correlation to electron transport

R. L. Willett, J. W.P. Hsu, D. Natelson, K. W. West, L. N. Pfeiffer

Research output: Contribution to journal › Article › peer-review

Abstract

The surface morphology of high mobility heterostructures was examined. It was found that the heterostructures show line formation with varying degrees of severity over the full complement of wafers tested. These surface properties were correlated to transport results.

Original language	English (US)
Article number	126803
Pages (from-to)	126803/1-126803/4
Journal	Physical review letters
Volume	87
Issue number	12
State	Published - Sep 17 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Cite this

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title = "Anisotropic disorder in high-mobility 2D heterostructures and its correlation to electron transport",

abstract = "The surface morphology of high mobility heterostructures was examined. It was found that the heterostructures show line formation with varying degrees of severity over the full complement of wafers tested. These surface properties were correlated to transport results.",

author = "Willett, {R. L.} and Hsu, {J. W.P.} and D. Natelson and West, {K. W.} and Pfeiffer, {L. N.}",

year = "2001",

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day = "17",

language = "English (US)",

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pages = "126803/1--126803/4",

journal = "Physical review letters",

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AU - Willett, R. L.

AU - Hsu, J. W.P.

AU - Natelson, D.

AU - West, K. W.

AU - Pfeiffer, L. N.

PY - 2001/9/17

Y1 - 2001/9/17

N2 - The surface morphology of high mobility heterostructures was examined. It was found that the heterostructures show line formation with varying degrees of severity over the full complement of wafers tested. These surface properties were correlated to transport results.

AB - The surface morphology of high mobility heterostructures was examined. It was found that the heterostructures show line formation with varying degrees of severity over the full complement of wafers tested. These surface properties were correlated to transport results.

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M3 - Article

AN - SCOPUS:39249084484

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JO - Physical review letters

JF - Physical review letters

IS - 12

M1 - 126803

ER -

Anisotropic disorder in high-mobility 2D heterostructures and its correlation to electron transport

Abstract

All Science Journal Classification (ASJC) codes

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