Anisotropic crystallization in solution processed chalcogenide thin film by linearly polarized laser

Tingyi Gu, Hyuncheol Jeong, Kengran Yang, Fan Wu, Nan Yao, Rodney D. Priestley, Claire Emily White, Craig B. Arnold

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The low activation energy associated with amorphous chalcogenide structures offers broad tunability of material properties with laser-based or thermal processing. In this paper, we study near-bandgap laser induced anisotropic crystallization in solution processed arsenic sulfide. The modified electronic bandtail states associated with laser irradiation lead to a distinctive photoluminescence spectrum, compared to thermally annealed amorphous glass. Laser crystalized materials exhibit a periodic subwavelength ripple structure in transmission electron microscopy experiments and show polarization dependent photoluminescence. Analysis of the local atomic structure of these materials using laboratory-based X-ray pair distribution function analysis indicates that laser irradiation causes a slight rearrangement at the atomic length scale, with a small percentage of S-S homopolar bonds converting to As-S heteropolar bonds. These results highlight fundamental differences between laser and thermal processing in this important class of materials.

Original languageEnglish (US)
Article number041904
JournalApplied Physics Letters
Volume110
Issue number4
DOIs
StatePublished - Jan 23 2017

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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