Analyzing and Increasing Yield of ZnO Thin-Film Transistors for Large-area Sensing Systems by Preventing Process-Induced Gate Dielectric Breakdown

Zhiwu Zheng, Levent E. Aygun, Yoni Mehlman, Sigurd Wagner, Naveen Verma, James C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin film transistors (TFT's) on flexible large-area substrates enable large-scale deployment of form-fitting embedded and tactile sensors. However, the combination of insulating substrates (e.g., glass, plastics), long metal traces for distributed sensors and circuits over large areas, plasma processing and packaging/assembly for hybrid (CMOS-TFT) systems makes anomalous breakdown in TFT gate dielectrics a prominent limiter of yield in complex systems. In this work, we use layout modifications, shielding layers, and temporary 'shorting bars' to enable high-yield processing and assembly of distributed sensor-acquisition circuits, in which 161 ZnO TFT's are used per sensor (Fig. 1) to implement compressed sensing (i.e., matrix projection). Although this is a large number of TFT's, compressed sensing greatly enhances critical system metrics, e.g., reduces the number of acquisition cycles and physical interfaces to a readout CMOS IC, as demonstrated in a tactile force-sensing system [1].

Original languageEnglish (US)
Title of host publication2019 Device Research Conference, DRC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages141-142
Number of pages2
ISBN (Electronic)9781728121123
DOIs
StatePublished - Jun 2019
Event2019 Device Research Conference, DRC 2019 - Ann Arbor, United States
Duration: Jun 23 2019Jun 26 2019

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2019-June
ISSN (Print)1548-3770

Conference

Conference2019 Device Research Conference, DRC 2019
CountryUnited States
CityAnn Arbor
Period6/23/196/26/19

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Zheng, Z., Aygun, L. E., Mehlman, Y., Wagner, S., Verma, N., & Sturm, J. C. (2019). Analyzing and Increasing Yield of ZnO Thin-Film Transistors for Large-area Sensing Systems by Preventing Process-Induced Gate Dielectric Breakdown. In 2019 Device Research Conference, DRC 2019 (pp. 141-142). [9046406] (Device Research Conference - Conference Digest, DRC; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC46940.2019.9046406